Feature profile evolution in plasma processing using on-wafer monitoring system [electronic resource]
| 000 | 00000nam u2200205 a 4500 | |
| 001 | 000046050431 | |
| 005 | 20201020172724 | |
| 006 | m d | |
| 007 | cr | |
| 008 | 201005s2014 ja a ob 001 0 eng d | |
| 020 | ▼a 9784431547952 | |
| 040 | ▼a 211009 ▼c 211009 ▼d 211009 | |
| 050 | 0 0 | ▼a TA2020 |
| 082 | 0 4 | ▼a 621.044 ▼2 23 |
| 084 | ▼a 621.044 ▼2 DDCK | |
| 090 | ▼a 621.044 | |
| 100 | 1 | ▼a Samukawa, Seiji. |
| 245 | 1 0 | ▼a Feature profile evolution in plasma processing using on-wafer monitoring system ▼h [electronic resource] / ▼c Seiji Samukawa. |
| 260 | ▼a Tokyo : ▼b Springer Japan : ▼b Imprint: Springer, ▼c 2014. | |
| 300 | ▼a 1 online resource (viii, 40 p.) : ▼b ill. (some col.). | |
| 336 | ▼a text ▼b txt ▼2 rdacontent | |
| 337 | ▼a computer ▼b c ▼2 rdamedia | |
| 338 | ▼a online resource ▼b cr ▼2 rdacarrier | |
| 490 | 1 | ▼a SpringerBriefs in applied sciences and technology, ▼x 2191-530X |
| 500 | ▼a Title from e-Book title page. | |
| 504 | ▼a Includes bibliographical references and index. | |
| 505 | 0 | ▼a Introduction -- On-wafer UV sensor and prediction of UV irradiation damage -- Prediction of Abnormal Etching Profiles in High-aspect-ratio Via/Hole Etching Using On-wafer Monitoring System -- Feature Profile Evolution in Plasma Processing Using Wireless On-wafer Monitoring System. |
| 520 | ▼a This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described. | |
| 530 | ▼a Issued also as a book. | |
| 538 | ▼a Mode of access: World Wide Web. | |
| 650 | 0 | ▼a Plasma engineering. |
| 650 | 0 | ▼a Plasma etching. |
| 830 | 0 | ▼a SpringerBriefs in applied sciences and technology. |
| 856 | 4 0 | ▼u https://oca.korea.ac.kr/link.n2s?url=http://dx.doi.org/10.1007/978-4-431-54795-2 |
| 945 | ▼a KLPA | |
| 991 | ▼a E-Book(소장) |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 중앙도서관/e-Book 컬렉션/ | 청구기호 CR 621.044 | 등록번호 E14035291 | 도서상태 대출불가(열람가능) | 반납예정일 | 예약 | 서비스 |