| 000 | 00928camuuu200277 a 4500 | |
| 001 | 000000565890 | |
| 003 | OCoLC | |
| 005 | 19970924173509.0 | |
| 008 | 950621s1996 enka b 001 0 eng | |
| 010 | ▼a 95032567 | |
| 020 | ▼a 0521461960 (hc) | |
| 040 | ▼a DLC ▼c DLC | |
| 049 | ▼a ACSL ▼l 121031190 | |
| 050 | 0 0 | ▼a QC611.6.D4 ▼b R43 1996 |
| 082 | 0 0 | ▼a 621.3815/2 ▼2 20 |
| 090 | ▼a 621.38152 ▼b R315p | |
| 100 | 1 | ▼a Redfield, David. |
| 245 | 1 0 | ▼a Photoinduced defects in semiconductors / ▼c David Redfield and Richard H. Bube. |
| 260 | ▼a Cambridge ; ▼a New York : ▼b Cambridge University Press, ▼c 1996. | |
| 300 | ▼a x, 217 p. : ▼b ill. ; ▼c 24 cm. | |
| 440 | 0 | ▼a Cambridge studies in semiconductor physics and microelectronic engineering ; ▼v 4. |
| 504 | ▼a Includes bibliographical references (p. 201-214) and index. | |
| 650 | 0 | ▼a Semiconductors ▼x Defects. |
| 650 | 0 | ▼a Photochemistry. |
| 700 | 1 | ▼a Bube, Richard H., ▼d 1927-. |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 과학도서관/Sci-Info(2층서고)/ | 청구기호 621.38152 R315p | 등록번호 121031190 (5회 대출) | 도서상태 대출가능 | 반납예정일 | 예약 | 서비스 |
컨텐츠정보
책소개
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III?V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
A thorough review of the properties of deep-level, localized defects in semiconductors.
정보제공 :
목차
1. Introduction: metastable defects; 2. III?V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.
정보제공 :