| 000 | 00000cam u2200205 a 4500 | |
| 001 | 000046008774 | |
| 005 | 20191212113924 | |
| 008 | 191210s2019 njua b 001 0 eng d | |
| 010 | ▼a 2018042653 | |
| 020 | ▼a 9789813237827 (hardcover) | |
| 035 | ▼a (KERIS)REF000018814085 | |
| 040 | ▼a LBSOR/DLC ▼b eng ▼e rda ▼c LBSOR ▼d 211009 | |
| 050 | 0 0 | ▼a QC611.8.W53 ▼b P87 2018 |
| 082 | 0 0 | ▼a 621.3815/2 ▼2 23 |
| 084 | ▼a 621.38152 ▼2 DDCK | |
| 090 | ▼a 621.38152 ▼b P987m | |
| 100 | 1 | ▼a Pushpakaran, Bejoy ▼q (Bejoy N.). |
| 245 | 1 0 | ▼a Modeling and electrothermal simulation of SiC power devices : ▼b using Silvaco© ATLAS / ▼c Bejoy N. Pushpakaran and Stephen B. Bayne, Texas Tech University. |
| 260 | ▼a Hackensack, NJ : ▼b World Scientific, ▼c c2019. | |
| 300 | ▼a xi, 449 p. : ▼b ill. (some col.) ; ▼c 26 cm. | |
| 504 | ▼a Includes bibliographical references and index. | |
| 505 | 0 | ▼a Introduction to semiconductor properties -- Introduction to Silvaco© ATLAS TCAD software -- Simulation models and parameters -- Simulation and key factors -- PIN diode -- Schottky diode -- Junction barrier schottky diode -- Power MOSFET. |
| 520 | ▼a "The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers and semiconductor professionals working in the area of SiC semiconductor technology and readers will find the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure"-- ▼c Provided by publisher. | |
| 630 | 0 0 | ▼a ATLAS TCAD (Computer program). |
| 650 | 0 | ▼a Wide gap semiconductors. |
| 650 | 0 | ▼a Silicon carbide. |
| 700 | 1 | ▼a Bayne, Stephen ▼q (Stephen B.). |
| 945 | ▼a KLPA |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 과학도서관/Sci-Info(2층서고)/ | 청구기호 621.38152 P987m | 등록번호 121251413 | 도서상태 대출가능 | 반납예정일 | 예약 | 서비스 |