Polysilicon thin films and interfaces : symposium held April 17-19, 1990, San Francisco, California, U.S.A.
| 000 | 01206camuuu200313 a 4500 | |
| 001 | 000000622179 | |
| 005 | 19981214132059.0 | |
| 008 | 900717s1990 paua b 101 0 eng | |
| 010 | ▼a 90044401 | |
| 020 | ▼a 1558990712 | |
| 040 | ▼a DLC ▼c DLC | |
| 049 | 1 | ▼l 421103859 ▼f 과학 |
| 050 | 0 0 | ▼a TK7871.15.S55 ▼b P66 1990 |
| 082 | 0 0 | ▼a 621.381/52 ▼2 20 |
| 090 | ▼a 621.38152 ▼b P783 | |
| 245 | 0 0 | ▼a Polysilicon thin films and interfaces : ▼b symposium held April 17-19, 1990, San Francisco, California, U.S.A. / ▼c editors, Theodore Kamins, Bruha Raicu, Carl V. Thompson. |
| 260 | ▼a Pittsburgh, Pa. : ▼b Materials Research Society, ▼c c1990. | |
| 300 | ▼a xiii, 403 p. : ▼b ill. ; ▼c 24 cm. | |
| 490 | 1 | ▼a Materials Research Society Symposium proceedings ; ▼v v. 182. |
| 504 | ▼a Includes bibliographical references and indexes. | |
| 650 | 0 | ▼a Silicon ▼x Electric properties ▼x Congresses. |
| 650 | 0 | ▼a Integrated circuits ▼x Materials ▼x Congresses. |
| 650 | 0 | ▼a Thin film devices ▼x Congresses. |
| 700 | 1 | ▼a Kamins, Theodore I. |
| 700 | 1 | ▼a Raicu, Bruha. |
| 700 | 1 | ▼a Thompson, C. V. ▼q (Carl V.). |
| 710 | 2 | ▼a Materials Research Society. |
| 830 | 0 | ▼a Materials Research Society symposia proceedings ; ▼v v. 182. |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 과학도서관/Sci-Info(2층서고)/ | 청구기호 621.38152 P783 | 등록번호 421103859 (9회 대출) | 도서상태 대출가능 | 반납예정일 | 예약 | 서비스 |
컨텐츠정보
책소개
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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목차
CONTENTS PREFACE =xi ACKNOWLEDGMENTS = xiii MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS = xiv PART Ⅰ: DEPOSITION POLY-Si-A MOST IMPORTANT MATERIAL / Martin L. Hammond = 3 INTERFACE OXIDE FREE POLY SILICON DEPOSITION USING IN-SITU HF CLEANING PROCESS / C. K. Huang ; A. Feygenson = 9 IN-SITU DOPED POLYCRYSTALLINE SILICON DEPOSITED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION USING TERTIARYBUTYLPHOSPHINE / Jiniiny C. Liao ; Ki-Bum Kim ; Philippe Maillot = 15 RAPID THERMAL CHEMICAL VAPOR DEPOSITION OF POLYCRYSTALLINE SILICON FROM DICHLOROSILANE / Ahmad Kermani ; Kristian E ; Johnsgard ; Sailish Suthar ; Ki-Bum Kim ; Chung Lam = 21 ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF POLYSILICON DEPOSITED IN A RAPID THERMAL PROCESSOR / X. Ren ; M. C.$$\ddot O$$ zt$$\ddot u$$ rk ; J. J. Wortman ; D. Batchelor ; D. Maher ; C. Blat ; E. Miccolian = 29 LARGE-GRAIN POLYSILICON FILMS DEPOSITED BY RAPID THERMAL LPCVD / S. J. N. Mitchell ; D. W. McNeill ; S. H. Raza ; B. M. Armstrong ; H. S. Gamble = 35 PROPERTIES OF IN SITU DOPED POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM PHOSPHINE AND DISILANE / Lynnette D. Madsen ; Louise Weaver = 43 CRYSTAL GROWTH STUDY OF SILICON AND GERMANIUM WAFERS USED FOR PHOTOVOLTAIC DEVICES / A. Chibani ; S. Sof ; M. Hamoud ; R. Gauthier ; P. Pinard = 49 PART Ⅱ: POLYSILICON-SILICIDE SYSTEMS THERMAL STABILITY OF CoSi₂ ON SINGLE CRYSTAL AND POLYCRYSTALLINE SILICON / J. R. Phillips ; P. Revesz ; J. O. Olowolafe ; J. W. Mayer = 57 TiSi₂ THIN FILMS FORMED ON CRYSTALLINE AND AMORPHOUS SILICON / Z.G. Xiao ; H. Jiang ; J. Honeycutt ; C. M. Osburn ; G. McGuire ; G. A. Rozgonyi = 65 GEOMETRICAL EFFECTS AND DISINTEGRATION OF NARROW TiSi₂ /POLY-Si LINES / H. Norstrbm ; K. Maex ; P. Vandenabeele = 71 THE EFFECT OF AMORPHOUS SILICON LAYER IN PE-CVD TITANIUM POLYCIDE GATE DIELECTRICS / Shih-Chang Chen ; Akihiro Sakamoto ; Hiroyuki Tamura ; Masaki Yoshimaru ; Masayoshi Ino = 77 COBALT SILICIDE FORMATION ON POLYSILICON: DOPANT EFFECTS ON REACTION KINETICS AND SILICIDE PROPERTIES / A. R. Sitaram ; S. P. Murarka = 83 MICROANALYSIS OF TUNGSTEN SILICIDE/POLYSILICON INTERFACE: EFFECTIVENESS OF IN SITU RIE CLEAN ON REMOVAL OF NATIVE OXIDE / Ronald S. Nowicki ; Patrice Geraghty ; David W. Harris ; Gayle Lux = 89 RAPID THERMAL ANNEALED TiW/Ti CONTACT METALLIZATION FOR ADVANCED VLSI Si CIRCUITS / Henry W. Cliung ; Agnes T. Yao = 97 PART Ⅲ: CRYSTALLIZATION, RECRYSTALLIZATION AND GRAIN GROWTH CRYSTALLIZATION OF SILICON ION IMPLANTED LPCVD AMORPHOUS SILICON FILMS FOR HIGH PERFORMANCE POLY-TFT / I-W. Wu ; A. Chiang ; M. Fuse ; L.$$\ddot O$$ vecoglu ; T. Y. Huang = 107 DOPANT ENHANCED GRAIN GROWTH DURING CRYSTALLIZATION OF AMORPHOUS SILICON USING RAPID THERMAL ANNEALING / R. Kakkad ; S. J. Fonash ; P. R. Howell = 115 NANOSECOND THERMAL PROCESSING OF POLYSILICON THIN FILMS / A. M. McCarthy ; K. H. Weiner ; Tom W. Sigmon = 121 PART Ⅳ: DIFFUSION MODELLING DIFFUSION IN AND FROM POLYSILICON LAYERS / C. Hill ; S. K. Jones = 129 DIFFUSION OF AS AND B IN POLYSILICON/SINGLE CRYSTAL SILICON SYSTEMS / K. Park ; S. Batra ; S. Banerjee ; G. Lux ; R. Manukonda = 141 APPLICATIONS OF SOLID PHASE DOPING IN MANUFACTURING MOS DEVICES / S. F. Gong ; H. T. G. Hentzell ; A. Robertsson = 147 SUPERSATURATED p-TYPE POLYCRYSTALLINE FILMS PRODUCED BY RAPID THERMAL ANNEALING OF HIGH DOSE BORON ION IMPLANTS FOR INTERCONNECTS AND SHALLOW JUNCTION DIFFUSION SOURCES / B. Raicu ; M. I. Current ; W. A. Keenan ; D. Mordo ; R. Brennan ; R. Holzworth = 153COMPARISON OF AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS AS A SOLID DIFFUSION SOURCE FOR ADVANCED VLSI PROCESSES / K. Park ; S. Batra ; S. Banerjee ; G. Lux = 159 PART Ⅴ: PROPERTIES AND CHARACTERIZATION ELECTRICAL AND OPTICAL PROPERTIES OF POLYSILICON SHEETS FOR PHOTOVOLTAIC DEVICES GROWN FROM POWDER / Natko B. Urli = 167 DEPTH VARIATION OF TRANSPORT PARAMETERS IN POLY-Si UNDER AM1 ILLUMINATION / Z. Chen ; L. C. Burton = 173 ORIGIN OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN SILICON WAFERS / H. Amanrich ; S. Martinuzzi ; M. Pasquinelli = 179 EFFECT OF GRAIN BOUNDARY SEGREGATION ON THE TRANSBARRIER CONDUCTIVITY OF POLYCRYSTALLINE SILICON / S. Pizzini ; M. Acciarri = 185 IN SITU HREM OBSERVATIONS OF CRYSTALLIZATION IN LPCVD AMORPHOUS SILICON / J. Morgiel ; I. W. Wu ; A. Chiang ; R. Sinclair = 191 EFFECTS OF ARSENIC SEGREGATION AND ELECTRON TRAPPING ON THE CAPACITANCE-VOLTAGE BEHAVIOR OF POLYSILICON AND POLYCIDE GATES / J. Lin ; S. Batra ; K. Park ; J. Lee ; S. Banerjee ; S. Sun ; J. Yeargain ; G. Lux = 195 INVESTIGATION OF TEXTURE AND STRESS IN UNDOPED POLYSILICON FILMS / J. Huang ; P. Krulevitch ; G. C. Johnson ; R. T. Howe ; H. R. Wenk = 201 LOW STRESS SILICON NITRIDE AND POLYSILICON FILMS FOR MICROMACHINING APPLICATIONS / P. A. Beck ; S. M. Taylor ; J. P. MeVittie ; S. T. Ahn = 207 CHARACTERIZATION OF POLYCRYSTALLINE SILICON THIN FILMS BY PHOTOLUMINESCENCE / R. Pandya ; K. Shahzad = 213 CHARACTERIZATION OF POLYSILICON THIN FILMS BY VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY / Yi-Ming Xiong ; Paul G. Snyder ; John A. Woollam ; Eric R. Krosche ; Yale Strausser = 219 EFFECTS OF THE GRAIN SIZE ON THE ELECTRICAL PROPERTIES OF BORON-DOPED POLYSILICON FILMS / A. Kobayashi ; S. Baba ; A. Kinbara ; H. Akimori ; M. kawaji ; N. Owada = 225 PART Ⅵ : IC APPLICATIONS AND PROCESS INTEGRATION POLYSILICON INTEGRATION / J. Ellul ; I. D. Calder = 233 POLYCRYSTALLINE SILICON AS A MECHANICAL MATERIAL / Richard S. Muller = 245 APPLICATION OF POLYSILICON IN ADVANCED IC - TECHNOLOGIES / Herbert Kabza ; Thomas F. Meister ; Hans Schaber = 247 POLYCRYSTALLINE SILICON IN ULSI TECHNOLOGIES: CHALLENGES FOR DEEP-SUBMICRON STRUCTURES / Catherine Y. Wong ; Tak H. Ning = 259 IMPACT OF POLYCRYSTALLINE SILICON PROCESSING ON PROPERTIES OF MOS MEMORY DEVICES / G. Queirolo ; M. Brambilla ; C. Mavero = 269 POLYSILICON ANNEALING AND ITS INFLUENCE ON FLOATING GATE EEPROM DEGRADATION / Rakesh B. Sethi ; L. B. Anderson = 275 IMPACT OF VARIOUS POLYSILICON DEPOSITION PROCESS ON THIN GATE-OXIDE PROPERTIES IN SUBMICRON CMOS TECHNOLOGY / P. K. Roy ; T. Kook ; V. C. Kannan ; G. J. Felton ; R. A. Powell ; A. N. Velaga = 281 INFLUENCE OF POLYSILICON PROCESSING ON THE QUALITY OF THIN RTP/FURNACE GATE OXTDES / J. Haase ; R. Ferretti ; S. Prasad = 287 SUBMICRON p-CHANNEL MOS DEVICES WITH BORON DOPED POLYSILICON GATES FABRICATED BY RAPID THERMAL PROCESSING / Sheldon M. Kugelmass ; J. Peter Krusius = 293 INVESTIGATIONS OF AN ANTIMONY DOPED POLY-SILICON GATE STRUCTURE FOR P-TYPE JFET APPLICATIONS / Anders S$$\ddot o$$ derb$$\ddot a$$ rg ;$$\ddot O$$ . Grelsson ; U. Magnusson = 299 EFFECT OF THE MOS PROCESS ON THE WORK-FUNCTION DIFFERENCE BETWEEN THE POLYSILICON GATES AND THE SILICON SUBSTRATE / N. Lifshitz = 305 THE ELECTRICAL PROPERTIES OF POLYOXIDE DEPENDING ON THE POLYCRYSTALLINE-Si FORMATION CONDITIONS / Kyoung-Soo Yi ; Deok-Ho Cho ; Jeong Yong Lee ; Kee-Soo Nam ; Sang-Won Kang ; Jin-Hyo Lee = 315 POST-ANNEALING EFFECT ON THE RELIABILITY OF ULTRA-THIN SILICON DIOXIDE WITH POLYSILICON GATE / Kenji Yoneda ; Yoshiki Fukuzaki ; Kazuo Satoh ; Yoshihiro Todokora ; Morio Inoue = 321 COMPARATIVE STUDIES OF GATE OXIDES USING THERMAL, STACKED GATE, AND RAPID THERMAL OXIDATION / S. Chittipeddi ; P.K. Roy ; V.C. Kannan ; R. Singh ; C. M. Dziuba = 327 PART Ⅶ: THIN-FILM TRANSISTORS POLYSILICON THIN FILM TRANSISTORS / Ichio Yudasaka ; Hiroyuki ohshima = 333 MEASUREMENTS OF GRAIN BOUNDARY TRAP DENSITY AND HYDROGEN DIFFUSIVITY IN POLYCRYSTALLINE SILICON FET'S / Chad B. Moore ; Dieter G. Ast = 341 THICKNESS EFFECTS ON THE ACTIVATION ENERGY OF SOURCEDRAIN CURRENT IN P AND N CHANNEL POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS / Babar A. Khan ; Ranjana Pandya = 347 DEFECT PASSIVATION KINETICS AND SMALL GEOMETRY EFFECTS IN POLYSILICON THIN FILMS TRANSISTORS / I-Wei Wu ; Tiao Huang ; Alan G. Lewis ; Warren B. Jackson ; Anne Chiang = 351 EFFECT OF GATE DIELECTRIC ON PERFORMANCE OF POLYSILICON THIN FILM TRANSISTORS / Miltiadis K. Hatalis ; Ji-Ho Kung ; Jerzy Kanicki ; Arthur A. Bright = 357 CHARACTERIZATION AND MODELING OF POLYSILICON TFTs AND TFT-CMOS CIRCUITS FOR INTEGRATED DRIVER APPLICATIONS / Dae M. Kim ; Feng Qian ; Michael J. Esralian ; Dana E. Whitlow ; Robert G. Culter ; Stephen C. Thayer = 363 HIGH PERFORMANCE THIN FILM TRANSISTORS FOR SCANNER APPLICATIONS / B. -C. Hseih ; G. A. Hawkins ; S. Ashok = 369 CMOS POLYSILICON THIN FILM TRANSISTORS WITH SIMULTANEOUSLY DEPOSITED LAYERS FOR SOURCE-DRAIN AND GATE / T. Y. Huang ; C. C. Tsai ; I. W. Wu ; A. G. Lewis ; A. Chiang ; R. H. Bruce = 375 HIGH PERFORMANCE POLYSILICON THIN FILM TRANSISTORS / U. Mitra ; B. A. Khan ; M. Venkatesan ; A. Carlson ; M. Vaez--Iravani ; E. Stupp = 381 POLYSILICON HIGH-VOLTAGE TFT WITH FIELD-PLATE-CONTROLLED OFFSET REGION / T. Y. Huang ; I. W. Wu ; A. G. Lewis ; A. Chiang ; R. H. Bruce = 387 COMPARATIVE STUDIES OF FURNACE AND RAPID THERMAL PASSIVATION FOR ACCUMULATION AND INVERSION MODE POLYSILICON-ON-OXIDE MOSFETS / S. Batra ; K. Park ; S. Banerjee ; R. Sundaresan = 393 AUTHOR INDEX = 399 SUBJECT INDEX = 401 MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS = 405