| 000 | 00000nam u2200205 a 4500 | |
| 001 | 000045971857 | |
| 005 | 20190226150948 | |
| 008 | 190226s2019 si a b 000 0 eng d | |
| 020 | ▼a 9789811333132 | |
| 040 | ▼a 211009 ▼c 211009 ▼d 211009 | |
| 082 | 0 4 | ▼a 006.32 ▼2 23 |
| 084 | ▼a 006.32 ▼2 DDCK | |
| 090 | ▼a 006.32 ▼b W244e | |
| 100 | 1 | ▼a Wan, Changjin. |
| 245 | 1 0 | ▼a Electric-double-layer coupled oxide-based neuromorphic transistors studies / ▼c Changjin Wan. |
| 260 | ▼a Singapore : ▼b Springer, ▼c c2019. | |
| 300 | ▼a xxi, 107 p. : ▼b ill. ; ▼c 25 cm. | |
| 490 | 1 | ▼a Springer theses |
| 500 | ▼a Originally presented as the author's thesis (doctoral)--University of Chinese Academy of Sciences, Beijing, China. | |
| 504 | ▼a Includes bibliographical references. | |
| 650 | 0 | ▼a Neuromorphics. |
| 650 | 0 | ▼a Transistors. |
| 830 | 0 | ▼a Springer theses. |
| 945 | ▼a KLPA |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 과학도서관/Sci-Info(2층서고)/ | 청구기호 006.32 W244e | 등록번호 121248055 (1회 대출) | 도서상태 대출가능 | 반납예정일 | 예약 | 서비스 |
컨텐츠정보
책소개
This book focuses on essential synaptic plasticity emulations and neuromorphic computing applications realized with the aid of three-terminal synaptic devices based on ion-coupled oxide-based electric-double-layer (EDL) transistors.
To replicate the robust, plastic and fault-tolerant computational power of the human brain, the emulation of essential synaptic plasticity and computation of neurons/synapse by electronic devices are generally considered to be key steps. The book shows that the formation of an EDL at the dielectric/channel interface that slightly lags behind the stimuli can be attributed to the electrostatic coupling between ions and electrons; this mechanism underlies the emulation of short-term synaptic behaviors. Furthermore, it demonstrates that electrochemical doping/dedoping processes in the semiconducting channel by penetrated ions from electrolyte can be utilized for the emulation of long-term synaptic behaviors. Lastly, it applies these synaptic transistors in an artificial visual system to demonstrate the potential for constructing neuromorphic systems. Accordingly, the book offers a unique resource on understanding the brain-machine interface, brain-like chips, artificial cognitive systems, etc.
New feature
This book focuses on essential synaptic plasticity emulations and neuromorphic computing applications realized with the aid of three-terminal synaptic devices based on ion-coupled oxide-based electric-double-layer (EDL) transistors.
To replicate the robust, plastic and fault-tolerant computational power of the human brain, the emulation of essential synaptic plasticity and computation of neurons/synapse by electronic devices are generally considered to be key steps. The book shows that the formation of an EDL at the dielectric/channel interface that slightly lags behind the stimuli can be attributed to the electrostatic coupling between ions and electrons; this mechanism underlies the emulation of short-term synaptic behaviors. Furthermore, it demonstrates that electrochemical doping/dedoping processes in the semiconducting channel by penetrated ions from electrolyte can be utilized for the emulation of long-term synaptic behaviors. Lastly, it applies these synaptic transistors in an artificial visual system to demonstrate the potential for constructing neuromorphic systems. Accordingly, the book offers a unique resource on understanding the brain-machine interface, brain-like chips, artificial cognitive systems, etc.
정보제공 :
목차
Intro -- Supervisor’s Foreword -- Abstract -- Acknowledgements -- Contents -- Acronyms -- Symbols -- 1 Introduction -- 1.1 Background -- 1.2 Brief Introduction of Electric-Double-Layer Transistors (EDLTs) -- 1.2.1 Overview of EDLTs -- 1.2.2 Basic Principle of EDL Transistors -- 1.2.3 Gate Dielectric Materials and Applications of EDL Transistors -- 1.3 Overview of Neuromorphic Devices -- 1.3.1 Introduction of Synapses and Their Behaviors -- 1.3.2 Introduction of Neuromorphic Devices and Neuromorphic Engineering -- 1.4 Topic Basis -- References -- 2 Fabrications and Characterizations of Oxide Based EDL Transistors -- 2.1 Introduction -- 2.2 Experimental Materials and Equipment -- 2.3 EDL Transistors Gated by Nanogranular SiO2 Electrolyte -- 2.3.1 Fabrication of Nanogranular SiO2 Electrolyte -- 2.3.2 Characterizations of Nanogranular SiO2 Electrolyte -- 2.3.3 The Performance of EDLT Gated by Nanogranular SiO2 -- 2.4 EDL Transistors Based on Novel Gate Dielectric Materials -- 2.4.1 EDL Transistors Gated by Methylcellulose -- 2.4.2 EDL Transistors Gated by Graphene Oxide -- 2.5 Summary -- References -- 3 Oxide Based EDL Transistors for Mimicking Synapse Functions -- 3.1 Introduction -- 3.2 Experimental Materials and Equipment -- 3.3 Emulations of Short-Term Synaptic Behaviors -- 3.3.1 Emulations and Modulations of Excitatory Postsynaptic Current -- 3.3.2 Emulations of Paired-Pulse Facilitation -- 3.3.3 Emulations of Spatiotemporal Correlated Dynamic Logics -- 3.4 Emulations of Long-Term Synaptic Behaviors -- 3.4.1 Emulations of Spike Timing-Dependent Plasticity -- 3.4.2 Emulations of Memory Behaviors -- 3.4.3 Emulations of Classical Conditioning -- 3.5 Summary -- References -- 4 Oxide-Based EDL Transistors for Neuromorphic Computing Applications -- 4.1 Introduction -- 4.2 Experimental Materials and Equipment -- 4.3 Nonlinear Dendritic Integration -- 4.3.1 Dendrite and Dendritic Integration -- 4.3.2 Emulation of Nonlinear Dendritic Integration -- 4.3.3 Modulation of Nonlinear Dendritic Integration -- 4.3.4 Analog Logic Based on Dendritic Integration -- 4.4 Neuronal Arithmetic -- 4.4.1 Introduction of Neuronal Arithmetic -- 4.4.2 Realization of Neuronal Arithmetic -- 4.5 Visual Processing Functions -- 4.5.1 Introduction of Visual Processing Function -- 4.5.2 Realization of Orientation Tuning Functions -- 4.5.3 Realization of Collision Avoidance -- 4.6 Summary -- References -- 5 Conclusion and Perspective -- 5.1 Conclusion -- 5.2 Perspective -- Reference -- Curriculum Vitae -- .
