상세정보

This reference provides detailed information which enables you to quickly understand the physics and modeling of mainstream devices. Packed with nearly 1,000 equations and 396 illustrations.

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CONTENTS
Preface = xi
Chapter 1 Semiconductor Device Fundamentals = 1
  1.1 Energy Band Theory 1
    1.1.1 Wave-Particle Duality 1
    1.1.2 Schr o ·· dinger Time-Dependent and Time-Independent Wave Equations = 3
    1.1.3 Solutions of the Schr o ·· dinger Time- Independent Wave Equation = 5
    1.1.4 Energy Band Theory of Free Carriers = 10
    1.1.5 Effective Mass Concept = 14
  1.2 Statistics of Free Carriers in Semiconductors = 16
    1.2.1 Fermi-Dirac Statistics = 16
    1.2.2 Maxwell-Boltzmann Statistics = 17
    1.2.3 Free-Carrier Concentration in Semiconductors = 18
    1.2.4 Temperature Effect on Free Carrier Concentration = 21
  1.3 Generation and Recomibination Processes = 26
    1.3.1 Band-to-Band Recombination = 27
    1.3.2 Auger Recombination = 29
    1.3.3 Shockley-Read-Hall Recombination = 29
    1.3.4 Surface Recombination = 31
  1.4 Boltzmann Transport Equation = 31
  1.5 Drift and Diffusion Mechanisms = 32
  1.6 Carrier Scattering Mechanisms = 35
  1.7 Basic Semicondtictor Device Equations = 39
  1.8 Monte Carlo Simulation = 41
  Problems = 49
  References = 51
Chapter 2 Physics and Models Related to p/n Junctions = 53
  2.1 Description of p/n Junction = 53
  2.2 Ambipolar Transport Equation = 57
  2.3 Linvill Lumped Circuit Model = 62
  2.4 Sah Transmission-Line Circuit Model = 66
  2.5 Current and Avalanche Breakdown in Reverse Biased p/n Junctions = 68
    2.5.1 Current in Reverse-Biased Junctions = 68
    2.5.2 Avalanche Breakdown in Reverse-Biased Junctions = 72
  2.6 Tunneling Currents in p/n Junctions = 76
    2.6.1 Reverse-Biased Tunneling Current = 76
    2.6.2 Forward-Biased Tunneling Current = 82
  2.7 Charge Storage in p/n Junctions = 84
    2.7.1 Capacitances p/n Junctions = 84
    2.7.2 Transient Behavior of p/n Junctions = 88
  2.8 Abrupt Heterojunction Diodes = 94
    2.8.1 Heterojunction Properties = 95
    2.8.2 Energy Band Discontinuities = 97
  2.9 Abrupt HeterOjLinctions with Setback Layer = 101
  2.10 draded Heterojunctiotis = 105
  Problems = 113
  References = 115
Chapter 3 Bipolar Junction Transistors = 119
  3.1 Steady-State Characteristics under Forward-Active Operation = 123
  3.2 Current-Voltage Characteristics IncIuding Saturation and Current-Induced Base Pushout = 125
    3.2.1 Base Pushout in Active Mode = 129
    3.2.2 Base Pushout in Saturation Mode = 130
  3.3 Effect of Quasi-Neutral Base Width Modulation (Early Effect) = 138
  3.4 Effect of Nonuniform Doping Concentration = 138
    3.4.1 Collector Current = 139
    3.4.2 Base Current = 141
  3.5 Avalanche Multiplication in BJTs = 142
  3.6 Charge Storage in BJTs = 145
    3.6.1 Junction Capacitances = 145
    3.6.2 Diffusion Capacitances = 154
  3.7 Multi-Dimensional Effects = 156
  3.8 Polyemitter Bipolar Transistors = 161
  3.9 Switching Speed of BJTs = 167
  3.10 Large- and Sniall-Signal Models = 173
  Problems = 178
  References = 182
Chapter 4 Junction Field-Effect Transistors = 185
  4.1 General Theory = 195
  4.2 Current- Voltage Characteristics of Three-Terminal JFETs = 189
    4.2.1 Saturation Current IS DS = 189
    4.2.2 Channel-Length Modulation Coefficient λ = 194
    4.2.3 Modeling the Merging Parameter = 197
  4.3 Current-Voltage Characteristics of Four-Terminal JFETs = 198
    4.3.1 Modeling the Merging Parameter and Channel-Length Modulation = 203
    4.3.2 Saturation Current IS DS = 203
    4.3.3 Discussion = 204
  4.4 Short-Channel JFETs = 207
    4.4.1 Simulation Results = 210
  4.5 Large- and Small-Channel Models = 223
  Problems = 225
  References = 226
Chapter 5 Metal-Oxide-Semiconductor Field-Effect Devices = 227
  5.1 Metal- Oxide- Semiconductor Diodes = 228
    5.1.1 Surface Potential and Electric Field = 232
    5.1.2 MOS Capacitance = 235
    5.1.3 Threshold Voltage of MOS Diode = 239
    5.1.4 Thresliold Voltage Including Flatband Voltage = 241
    5.1.5 Threshold Voltage Including Body Effect = 241
  5.2 Metal-Oxide-Semiconductor Field-Effect Transistor = 242
    5.2.1 Threshold Voltage of MOSFET = 242
    5.2.2 Current-Voltage Characteristies = 243
    5.2.3 Short-Channel Effect = 255
    5.2.4 Narrow-Channel Effect = 258
    5.2.5 The Effects of Short and Narrow Channels on Drain Current = 260
    5.2.6 Scaling Rule for MOSFET Miniaturization = 265
    5.2.7 Effects of Nonuniform Doping Profile on Ⅰ-Ⅳ Characteristies = 266
  5.3 Numerical and Experimental Results = 268
  5.4 Hot-Carrier Effects = 273
  5.5 Capacitances of Intrinsic MOSFET = 278
  5.6 MOSFET Equivalent Cirecuit = 282
  Problems = 283
  References = 285
Chapter 6 Metal-Semiconductor Junction Devices = 289
  6.1 Schottky Diode = 289
    6.1.1 Basic Concept = 289
    6.1.2 Barrier Lowering Effect = 296
    6.1.3 Current-Voltage Characteristics = 298
  6.2 Ohmic Contact = 300
  6.3 Metal-Semiconductor Field-Effect Transistor = 300
    6.3.1 Simple MESFET Model = 304
    6.3.2 Improved Model for Submicron MESFETs = 306
    6.3.3 Two-Dimensional Analysis = 318
    6.3.4 Large- and Small-Signal Models = 325
  Problems = 330
  References = 331
Chapter 7 Heterojunction Bipolar and Field-Effect Transistors = 333
  7.1 Single Heterojunction Bipolar Transistors = 333
    7.1.1 Collector Current of Abrupt HBTs = 337
    7.1.2 Base Current of Abrupt HBTs = 340
    7.1.3 Base Gradirig = 348
    7.1.4 Charge Storage in HBTs = 353
    7.1.5 Cutoff Frequency of HBTs = 357
  7.2 Abrupt HBTs with a Setback Layer = 364
    7.2.1 Collector Current = 365
    7.2.2 Base Current = 366
    7.2.3 Results = 366
  7.3 HBTs with a Graded Junction = 371
    7.3.1 Collector Current = 373
    7.3.2 Base Current = 373
    7.3.3 Results = 375
  7.4 Base and Collector Leakage Currents = 380
    7.4.1 Leakage Current at Emitter-Base Periphery = 381
    7.4.2 Leakage Current at Base-Collector Periphery = 382
    7.4.3 Total Base and Collector Currents = 392
  7.5 Double Heterojunction Bipolar Transistors = 385
    7.5.1 Base-Collector Junction Capacitance = 386
    7.5.2 Offset Voltage of Single and Double HBTs = 390
  7.6 Heterojunction Field-Effect Transistors = 393
    7.6.1 Two-Dimensional Electron Gas at AlGaAs/GaAs Interface = 359
    7.6.2 Two-Dimensional Electron Gas Mobility and Velocity = 397
    7.6.3 Current-Voltage Characteristics of HFETs = 398
  Problems = 401
  References = 403
Chapter 8 Solar Cells = 407
  8.1 Basic Concept = 408
    8.1.1 Air Mass and Spectral Response = 408
    8.1.2 Short-Circuit Current and Open-Circuit Voltage = 412
    8.1.3 Fill Factor and Conversion Efficiency = 414
  8.2 Hormojunction Solar Cells = 415
    8.2.1 Short-Circuit Current for Si and GaAs Cells = 416
    8.2.2 Open-Circuit Voltage for Si and GaAs Cells = 421
    8.2.3 Optimization and Comparison of Si and GaAs Cells = 423
  8.3 Heterojunction Solar Cells = 428
    8.3.1 Short-Circuit Current and Open-Circuit Voltage = 429
    8.3.2 Results and Optimization = 430
  8.4 Effect of V-Groove Front Surface on Solar Cell Performance = 437
    8.4.1 Fixed Cell Orientation = 440
    8.4.2 Cells On Sun Tracking Structure = 447
  Problems = 450
  References = 452
Chapter 9 Photoconductive Diodes = 457
  9.1 Device Structure and Characteristics = 457
  9.2 General Theories = 462
  9.3 Conductivity and Current = 463
    9.3.1 Dark (Light-Off) State = 464
    9.3.2 Ilumination (Light-On) State = 466
  9.4 Effect of Contact Regions = 467
    9.4.1 Forward-Biased p+ -i- n+ Structure = 468
    9.4.2 Reverse-Biased p+ -i- n+ Structure = 468
    9.4.3 p+ -i- p+ Structure = 468
  9.5 Two-Dimensional Analysis = 472
    9.5.1 Light-Off State = 473
    9.5.2 Light-On State = 478
  9.6 Transient Behavior of Photoconductive Diodes = 481
  Problems = 488
  References = 489
About the Author = 491
Index = 493