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Fundamentals of Carrier Transport explores the behavior of charged carriers in semiconductors and semiconductor devices for readers without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices and coverage of "full band" transport. Lundstrom also covers both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. He explains in detail the use of Monte Carlo simulation methods and provides many homework exercises along with a variety of worked examples. What makes this book unique is its broad theoretical treatment of transport for advanced students and researchers engaged in experimental semiconductor device research and development.

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CONTENTS
An Overview = 1
1 The Quantum Foundation
 1.1 Electrons in a Nonuniform Potential, $$E_co$$(r) = 6
  1.1.1 Probability Current = 11
 1.2 Electrons in a Periodic Potential, $$U_c$$(r) = 13
  1.2.1 Model Band Structure = 17
  1.2.2 Band Structure of Semiconductor Alloys and Heterojunctions = 20
  1.2.3 Counting States = 21
 1.3 Electron Wave Propagation in Devices = 23
  1.3.1 Quantum Confinement = 25
 1.4 Semiclassical Electron Dynamics = 30
 1.5 Scattering of Electrons by the Random Potential, $$U_s$$(r, t) = 32
  1.5.1 Examples = 36
 1.6 Lattice Vibrations (Phonons) = 38
 1.7 Summary = 40
  References = 40
  Problems = 41
2 Carrier Scattering
 2.1 Relaxation Times = 45
  2.1.1 Example = 48
 2.2 Scattering by Ionized Impurities = 49
  2.2.1 Unscreened Coulomb Scattering = 54
  2.2.2 Strongly Screened Coulomb Scattering = 56
  2.2.3 Discussion = 56
 2.3 Energy and Momentum Conservation in Phonon Scattering = 57
  2.3.1 Intravalley Acoustic Phonon Scattering = 58
  2.3.2 Intravalley Optical Phonon Scattering = 59
 2.4 The Electron-Phonon Interaction = 60
 2.5 Deformation Potential Scattering = 64
  2.5.1 Optical Deformation Potential Scattering = 68
 2.6 Polar Optical Phonon Scattering = 70
  2.6.1 POP Energy Relaxation Time = 74
  2.6.2 POP Momentum Relaxation Time = 74
 2.7 Intervalley Scattering = 75
 2.8 Carrier-Carrier and Plasmon Scattering = 77
 2.9 Phonon Scattering of Confined Carriers = 81
 2.10 Scattering Rates for Nonparabolic Energy Bands = 88
 2.11 Electron Scattering in Intrinsic Si and GaAs = 89
 2.12 Summary = 92
  References = 94
  Problems = 95
3 The Boltzmann Transport Equation
 3.1 The Distribution Function, f(r, p, t) = 99
 3.2 The Boltzmann Transport Equation = 106
 3.3 The Collision Integral and the Relaxation Time Approximation = 109
  3.3.1 The Relaxation Time Approximation = 110
 3.4 Solving the BTE in the Relaxation Time Approximation = 112
  3.4.1 Equilibrium = 112
  3.4.2 Uniform Electric Field with a Constant Relaxation Time = 113
  3.4.3 Uniform Electric Field with Energy-Dependent Relaxation Time = 115
3.5 Validity of the Relaxation Time Approximation = 118
3.6 Numerical Solution to the BTE = 122
3.7 Validity of the Boltzmann Transport Equation = 124
3.8 Summary = 126
  References = 127
  Problems = 127
4 Low-Field Transport
 4.1 Low-Field Solution to the BTE (B＝0) = 131
 4.2 The Coupled Current Equations = 133
 4.3 Transport Coefficients = 137
  4.3.1 Ellipsoidal Energy Bands = 139
  4.3.2 Multiple Scattering Mechanisms = 141
 4.4 Transport in a Weak Magnetic Field = 142
 4.5 The Phenomenological Current Equations = 147
  4.5.1 Inversion of the Transport Equations = 147
  4.5.2 Taylor Series Expansions of Transport Tensors = 148
  4.5.3 Transport Coefficients for Cubic Semiconductors = 150
 4.6 Applications of the Phenomenological Equations = 151
  4.6.1 Thermoelectric Effects = 152
  4.6.2 Thermomagnetic Effects = 153
  4.6.3 Galvanomagnetic Effects = 154
 4.7 Low-Field Mobility of Electrons in Si and GaAs = 157
  4.7.1 Low-Field Mobility Due to Ionized Impurity and Phonon Scattering = 157
  4.7.2 Low-Field Mobility of Electrons in Silicon = 160
  4.7.3 Low-Field Mobility of Electrons in Gallium Arsenide = 162
 4.8 Summary = 164
  References = 164
  Problems = 165
5 Balance Equations
 5.1 The Prescription = 171
 5.2 Characteristic Times = 176
  5.2.1 The Out-Scattering Rates = 177
 5.3 The Balance Equations = 177
  5.3.1 The Carrier Density Balance Equation = 177
  5.3.2 The Momentum Balance Equation = 179
  5.3.3 The Energy Balance Equation = 181
  5.3.4 Discussion = 182
 5.4 Carrier Temperature and Heat Flux = 182
 5.5 Simplifications for Device Applications = 187
  5.5.1 The Displaced Maxwellian Approximation = 189
  5.5.2 Discussion = 191
 5.6 Drift-Diffusion Equations = 191
  5.6.1 Discussion = 193
 5.7 Summary = 194
  References = 195
  Problems = 195
6 Monte Carlo Simulation
  6.1 Particle Simulation = 202
  6.2 Free Flight = 205
  6.3 Identification of the Scattering Event = 210
  6.4 Updating the Momentum After Scattering = 212
  6.5 Simulation of Devices = 218
  6.5.1 Many-Particle Monte Carlo = 219
  6.5.2 Incident Flux Approach = 220
 6.6 Monte Carlo Simulation and the BTE = 228
 6.7 Summary = 230
  References = 231
  Problems = 231
7 High-Field Transport in Bulk Semiconductors
 7.1 Qualitative Features of High-Field Transport = 235
 7.2 The Electron Temperature Approach = 239
  7.2.1 Solution by Balance Equations = 241
  7.2.2 The Hot Carrier Mobility = 242
  7.2.3 The Energy Relaxation Time = 244
 7.3 The Monte Carlo Approach = 246
  7.3.1 Monte Carlo Simulation of High-Field Electron Transport in Pure Si = 246
  7.3.2 Monte Carlo Simulation of High-Field Electron Transport in Pure GaAs = 250
 7.4 Some Experimental Results for Si and GaAs = 253
  7.4.1 High-Field Electron Transport in Silicon = 253
  7.4.2 High-Field Electron Transport in GaAs = 256
 7.5 Summary = 258
  References = 258
  Problems = 260
8 Carrier Transport in Devices
 8.1 The Drift-Diffusion Equation = 263
 8.2 Ballistic Transport = 264
 8.3 Velocity Overshoot = 268
 8.4 Diffusion or Ensemble Effects = 272
 8.5 Diffusion in Strong Concentration Gradients = 281
 8.6 Built-in Fields = 283
 8.7 Transport in Compositionally Nonuniform Semiconductors = 285
 8.8 Device Simulation = 288
  8.9.1 The Drift-Diffusion Approach = 290
  8.8.2 The Momentum and Energy Balance Approach = 291
  8.8.3 The Monte Carlo Approach = 297
 8.9 Summary = 298
  References = 300
  Problems = 302
Appendix: Some Useful Integrals = 304
Index = 305