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The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

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CONTENTS
CHAPTER 1. Classification of Solids and Crystal Structure
 1.1. Introduction = 1
 1.2. The Bravais Lattice = 2
 1.3. The Crystal Structure = 5
 1.4. Miller Indices and the Unit Cell = 6
 1.5. The Reciprocal Lattice and Brillouin Zone = 8
 1.6. Types of Crystal Bindings = 11
 1.7. Defects in a Crystalline Solid = 13
  1.7.1. Vacancies and Interstitials = 13
  1.7.2. Line and Surface Defects = 16
  Problems = 18
  Bibliography = 18
CHAPTER 2. Lattice Dynamics
 2.1. Introduction = 21
 2.2. The One-Dimensional Linear Chain = 22
 2.3. Dispersion Relation for a Three-Dimensional Lattice = 27
 2.4. Concept of Phonons = 29
 2.5. The Density of States and Lattice Spectrum = 30
 2.6. Lattice Specific Heat = 32
 2.7. Elastic Constants and Velocity of Sound = 35
  Problems = 37
  References = 39
  Bibliography = 39
CHAPTER 3. Semiconductor Statistics
 3.1. Introduction = 41
 3.2. Maxwell-Boltzmann (M-B) Statistics = 42
 3.3. Fermi-Dirac (F-D) Statistics = 45
 3.4. Bose-Einstein (B-E) Statistics = 50
 3.5. Statistics in the Shallow-Impurity States = 52
  Problems = 53
  Bibliography = 54
CHAPTER 4. Energy Band Theory
 4.1. Introduction = 55
 4.2 The Bloch-Floquet Theorem = 56
 4.3. The Kronig-Penney Model = 57
 4.4. The Nearly-Free Electron Approximation = 62
 4.5. The Tight-Binding (LCAO) Approximation = 68
  4.5.1. The Simple Cubic Lattice = 71
  4.5.2. The Body-Centered Cubic Lattice (the s-like states) = 72
 4.6. Energy Band Structures for Semiconductors = 73
 4.7. The Effective Mass Concept = 78
 4.8. Energy Band Structure and Density of States in a Superlattice = 80
  Problems = 83
  References = 85
  Bibliography = 85
CHAPTER 5. Equilibrium Properties of Semiconductors
 5.1. Introduction = 87
 5.2. Densities of Electrons and Holes in a Semiconductor = 88
 5.3. Intrinsic Semiconductors = 94
 5.4. Extrinsic Semiconductors = 96
 5.5. Ionization Energy of a Shallow Impurity Level = 102
 5.6. Hall Effect, Hall Mobility, and Electrical Conductivity = 104
 5.7. Heavy Doping Effects in a Degenerate Semiconductor = 107
  Problems = 109
  Reference = 111
  Bibliography = 111
CHAPTER 6. Excess Carrier Phenomenon in Semiconductors
 6.1. Introduction = 113
 6.2. Nonradiative Recombination: Shockley-Read-Hall Model = 114
 6.3. Band-to-Band Radiative Recomibination = 118
 6.4. Band-to-Band Auger Recombination = 121
 6.5. Basic Semiconductor Equations = 124
 6.6. Charge-Neutrality Conditions = 126
 6.7. The Haynes-Shockley Experiment = 128
 6.8. Minority Carrier Lifetimes and Photoconductivity Experiment = 130
 6.9. Surface States and Surface Recombination Velocity = 135
 6.10. Deep-Level Transient Spectroscopy (DLTS) Technique = 138
 6.11. Surface Photovoltage (SPV) Technique = 141
  Problems = 143
  References = 145
  Bibliography = 145
CHAPTER 7. Transport Properties of Semiconductors
 7.1. Introduction = 147
 7.2. Galvanomagnetic, Thennoelectric, and Thermomagnetic Effects = 149
  7.2.1. Electrical Conductivity $$σ_n$$ = 149
  7.2.2. Electronic Thermal Conductivity $$K_n$$ = 151
  7.2.3. Thermoelectric Coefficients = 152
  7.2.4. Galvanomagnetic and Thermomagnetic Coefficients = 153
 7.3. Boltzmann Transport Equation = 155
 7.4. Derivation of Transport Coefficients = 156
  7.4.1. Electrical Conductivity $$σ_n$$ = 158
  7.4.2. Hall Coefficient $$R_H$$ = 161
  7.4.3. Seebeck Coefficient $$S_n$$ = 164
  7.4.4. Nernst Coefficient $$Q_n$$ = 164
  7.4.5. Transverse Magnetoresistance = 165
 7.5. Transport Coefficients for the Mixed Conduction Case = 169
  7.5.1. Electrical Conductivity σ = 169
  7.5.2. Hall Coefficient $$R_H$$ = 169
  7.5.3. Seebeck Coefficient S = 170
  7.5.4. Nernst Coefficient Q = 171
 7.6. Transport Coefficients for Some Semiconductors = 171
  Problems = 179
  References = 181
  Bibliography = 181
CHAPTER 8. Scattering Mechanisms and Carrier Mobilities in Semiconductors
 8.1. Introduction = 183
 8.2. Differential Scattering Cross Section = 186
 8.3. Ionized Impurity Scattering = 189
 8.4. Neutral Impurity Scattering = 192
 8.5. Acoustic Phonon Scattering = 193
  8.5.1. Deformation Potential Scattering = 194
  8.5.2. Piezoelectric Scattering = 196
 8.6. Optical Phonon Scattering = 198
 8.7. Scattering by Dislocations = 200
 8.8. Electron and Hole Mobilities in Semiconductors = 201
 8.9. Hot Electron Effects in a Semiconductor = 204
  Problems = 209
  References = 210
  Bibliography = 211
CHAPTER 9. Optical Properties and Photoelectric Effects
 9.1. Optical Constants of a Solid = 214
 9.2. Free-Carrier Absorption Process = 219
 9.3 Fundamental Absorption Process = 222
  9.3.1. Direct Transition Process = 224
  9.3.2. Indirect Transition Process = 225
 9.4. The Photoconductive Effect = 228
  9.4.1. Kinetics of Photoconduction = 235
  9.4.2. Practical Applications of Photoconductivity = 237
 9.5. The Photovoltaic (Dember) Effect = 238
 9.6. The Photomagnetoelectric Effect = 240
  Problems = 244
  References = 245
  Bibliography = 245
CHAPTER 10. Metal-Semiconductor Contacts
 10.1. Introduction = 247
 10.2. Metal Work Function and Schottky Effect = 248
 10.3. Thermionic Emission Theory = 249
 10.4. Ideal Schottky Barrier Contact = 252
 10.5. Current Flow in a Schottky Barrier Diode = 256
  10.5.1. Thermionic Emission Model = 257
  10.5.2. Image Lowering Effect = 258
  10.5.3. The Diffusion Model = 259
 10.6. I-N Characteristics of a Silicon and a GaAs Schottky Diode = 261
 10.7. Determination of Barrier Height = 264
 10.8. Enhancement of Effective Barrier Height = 269
 10.9. Applications of Schottky Diodes = 275
  10.9.1. Photodetectors and Solar Cells = 275
  10.9.2. Schottky-Clamped Transistors = 277
  10.9.3. Microwave Mixers = 278
 10.10. Ohmic Contacts = 279
  Problems = 284
  References = 285
  Bibliography = 295
CHAPTER 11. p-n Junction Diodes
 11.1. Introduction = 287
 11.2. Equilibrium Properties of a p-n Junction Diode = 287
 11.3. p-n Junction Under Bias Conditions = 293
 11.4. Minority Carrier Distribution and Current Flow = 296
 11.5. Diffusion Capacitance and Conductance = 301
 11.6. Minority Carrier Storage and Transient Behavior = 304
 11.7. Zener and Avalanche Breakdowns = 307
 11.8. Tunnel Diode = 312
 11.9. p-n Heterojunction Diodes = 314
 11.10. Junction Field-Effect Transistors = 318
  Problems = 324
  References = 325
  Bibliography = 326
CHAPTER 12. Photonic Devices
 12.1. Introduction = 327
 12.2. Photovoltaic Devices = 328
  12.2.1. p-n Junction Solar Cells = 329
  12.2.2. Schottky Barrier and MIS Solar Cells = 338
  12.2.3. Heterojunction Solar Cells = 341
  12.2.4. Thin Film Solar Cells = 343
 12.3. Photodetectors = 344
  12.3.1. p-n Junction Photodiodes = 348
  12.3.2. p-i-n Photodiodes = 349
  12.3.3. Avalanche Photodiodes = 353
  12.3.4. Schottky Barrier Photodiodes = 357
  12.3.5. Point-Contact Photodiodes = 358
  12.3.6. Heterojunction Photodiodes = 358
  12.3.7. Photomultipliers = 359
  12.3.8. Long-Wavelength Infrared Detectors = 360
 12.4. Light-Emitting Diodes (LEDs) = 363
  12.4.1. Injection Mechanisms = 364
  12.4.2. Electronic Transitions = 365
  12.4.3. Luminescent Efficiency and Injection Efficiency = 365
  12.4.4. Application of LEDs = 370
 12.5. Semiconductor Laser Diodes = 375
  12.5.1. Population Inversion = 375
  12.5.2. Oscillation Conditions = 377
  12.5.3. Threshold Current Density = 378
  12.5.4. GaAs Laser Diodes = 380
  12.5.5. Semiconductor Laser Materials = 384
  12.5.6. Applications of Lasers = 386
  Problems = 387
  References = 388
  Bibliography = 389
CHAPTER 13. Bipolar Junction Transistor
 13.1. Introducfion = 391
 13.2. Basic Structures and Modes of Operation = 392
 13.3. Current-Voltage Characteristics = 393
 13.4. Current Gain, Base Transport Factor, and Emitter Injection Efficiency = 401
 13.5. Modeling of a Bipolar Junction Transistor = 404
 13.6. Switching Transistor = 409
 13.7. Advanced Bipolar Transistor = 414
 13.8. Thyristors = 415
  Problems = 420
  References = 421
  Bibliography = 422
CHAPTER 14. Metal-Oxide-Semiconductor Field-Effect Transistors
 14.1. Introduction = 423
 14.2. An Ideal Metal-Oxide-Semiconductor System = 423
  14.2.1. Surface Space-Charge Region = 426
  14.2.2. Capacitance-Voltage Characteristics = 427
 14.3. Oxide Charges and Interface Traps = 430
  14.3.1. Interface Trap Charges = 431
  14.3.2. Oxide Charges = 433
 14.4. The MOS Field-Effect Transistors = 435
  14.4.1. General Characteristics of a MOSFET = 436
  14.4.2. Channel Conductance = 437
  14.4.3. Current-Voltage Characteristics = 439
  14.4.4. Small-Signal Equivalent Circuit = 442
  14.4.5. Scaled-Down MOSFETs = 444
 14.5. Charge-Coupled Devices = 446
  14.5.1. Charge Storage and Transfer = 447
  14.5.2. Charge Injection and Detection = 450
  14.5.3. Buried-Channel CCDs = 451
  Problems = 452
  References = 453
  Bibliography = 453
CHAPTER 15. High-Speed Ⅲ-Ⅴ Semiconductor Devices
 15.1. Introduction = 455
 15.2. Metal-Semiconductor Field-Effect Transistors = 456
  15.2.1. Basic Device Structure and Characteristics = 456
  15.2.2. Current-Voltage Characteristics = 460
  15.2.3. Small-Signal Device Parameters = 463
  15.2.4. Second-Order Effects in a GaAs MESFET = 467
 15.3. Modulation-Doped Field-Effect Transistors (MODFETs) = 468
  15.3.1. Equilibrium Properties of the 2-DEG in GaAs = 470
  15.3.2. 2-DEG Charge Control Regime = 474
  15.3.3. Current-Voltage Characteristics = 475
 15.4. Heterojunction Bipolar Transistor = 481
  15.4.1. Device Structure and Fabrication Technology = 481
  15.4.2. Current Gain and Device Parameters = 483
  15.4.3. Current-Voltage Characteristics = 495
  15.4.4. High-Frequency Performance = 486
 15.5. Hot Electron Transistors = 490
 15.6. Resonant Tunneling Devices = 493
 15.7. Transferred- Electron Devices = 495
  Problems = 499
  References = 501
  Bibliography = 501
Index = 503