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| 001 | 000001081256 | |
| 005 | 20021107154939 | |
| 008 | 990329s1999 nyua b 001 0 eng | |
| 020 | ▼a 0815514395 | |
| 040 | ▼a DLC ▼c DLC ▼d DLC ▼d 244002 | |
| 042 | ▼a pcc | |
| 049 | 0 | ▼l 151130896 |
| 050 | 0 0 | ▼a TK7871.85 ▼b .P395 2000 |
| 082 | 0 0 | ▼a 621.38152 ▼2 21 |
| 090 | ▼a 621.38152 ▼b P362p | |
| 100 | 1 | ▼a Pearton, S. J. |
| 245 | 1 0 | ▼a Processing of wide bandgap semiconductors / ▼c by Stephen J. Pearton. |
| 260 | ▼a Norwich, NY : ▼b Noyes Publications/William Andrews Pub., ▼c 1999. | |
| 300 | ▼a xx,571 p. : ▼b ill. ; ▼c 25 cm. | |
| 504 | ▼a Includes bibliographical references. | |
| 650 | 0 | ▼a Semiconductors ▼x Design and construction. |
| 650 | 0 | ▼a Wide gap semiconductors. |
| 650 | 0 | ▼a Compound semiconductors. |
Holdings Information
| No. | Location | Call Number | Accession No. | Availability | Due Date | Make a Reservation | Service |
|---|---|---|---|---|---|---|---|
| No. 1 | Location Science & Engineering Library/Sci-Info(Stacks2)/ | Call Number 621.38152 P362p | Accession No. 121157464 (5회 대출) | Availability Available | Due Date | Make a Reservation | Service |
| No. 2 | Location Sejong Academic Information Center/Science & Technology/ | Call Number 621.38152 P362p | Accession No. 151130896 | Availability Loan can not(reference room) | Due Date | Make a Reservation | Service |
| No. | Location | Call Number | Accession No. | Availability | Due Date | Make a Reservation | Service |
|---|---|---|---|---|---|---|---|
| No. 1 | Location Science & Engineering Library/Sci-Info(Stacks2)/ | Call Number 621.38152 P362p | Accession No. 121157464 (5회 대출) | Availability Available | Due Date | Make a Reservation | Service |
| No. | Location | Call Number | Accession No. | Availability | Due Date | Make a Reservation | Service |
|---|---|---|---|---|---|---|---|
| No. 1 | Location Sejong Academic Information Center/Science & Technology/ | Call Number 621.38152 P362p | Accession No. 151130896 | Availability Loan can not(reference room) | Due Date | Make a Reservation | Service |
Contents information
Book Introduction
Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
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Table of Contents
Doping Limits and Bandgap Engineering in Wide Gap IIVI Compounds
Epitaxial Growth of II-VI Compounds by MOVPE
Ohmic Contacts to II-VI and III-V Compound Semiconductors
Dry Etching of SiC
Processing of Silicon Carbide for Devices and Circuits
Plasma Etching of III-V Nitrides
Ion Implantation in Wide Bandgap Semiconductors
Rare Earth Impurities in Wide Gap Semiconductors
SIMS Analysis of Wide Bandgap Semiconductors
Hydrogen in Wide Bandgap Semiconductors
Diamond Deposition and Characterization
Index
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