| 000 | 01061pamuu2200301 a 4500 | |
| 001 | 000045442669 | |
| 005 | 20080523103917 | |
| 008 | 950328s1995 maua b 001 0 eng | |
| 010 | ▼a 95012433 | |
| 020 | ▼a 012137940X (alk. paper) | |
| 035 | ▼a (KERIS)REF000009500055 | |
| 040 | ▼a DLC ▼c DLC ▼d DLC ▼d 211009 | |
| 050 | 0 0 | ▼a TK7871.99.A45 ▼b P55 1995 |
| 082 | 0 0 | ▼a 621.3815/2 ▼2 22 |
| 090 | ▼a 621.38152 ▼b P715 | |
| 245 | 0 0 | ▼a Plasma deposition of amorphous silicon-based materials / ▼c edited by Giovanni Bruno, Pio Capezzuto, Arun Madan. |
| 260 | ▼a Boston : ▼b Academic Press , ▼c c1995. | |
| 300 | ▼a xi, 324 p. : ▼b ill. ; ▼c 24 cm. | |
| 440 | 0 | ▼a Plasma--materials interactions |
| 504 | ▼a Includes bibliographical references and index. | |
| 650 | 0 | ▼a Amorphous semiconductors ▼x Design and construction. |
| 650 | 0 | ▼a Silicon alloys. |
| 650 | 0 | ▼a Plasma-enhanced chemical vapor deposition. |
| 700 | 1 | ▼a Bruno, Giovanni. |
| 700 | 1 | ▼a Capezzuto, Pio. |
| 700 | 1 | ▼a Madan, A. ▼q (Arun) |
| 945 | ▼a KINS |
Holdings Information
| No. | Location | Call Number | Accession No. | Availability | Due Date | Make a Reservation | Service |
|---|---|---|---|---|---|---|---|
| No. 1 | Location Science & Engineering Library/Sci-Info(Stacks2)/ | Call Number 621.38152 P715 | Accession No. 121170975 (2회 대출) | Availability Available | Due Date | Make a Reservation | Service |
Contents information
Book Introduction
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced.Key Features* Focuses on the plasma chemistry of amorphous silicon-based materials* Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced* Features an international group of contributors* Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
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Table of Contents
CONTENTS Contributors = ⅸ Preface = xi 1. Chemistry of Amorphous Silicon Deposition Processes : Fundamentals and Controversial Aspects / Giovanni Bruno ; Pio Capezzuto ; Grazia Cicala = 1 Ⅰ. Introduction = 1 Ⅱ. Some Fundamentals on Plasma Deposition = 4 Ⅲ. Chemical Systems for Amorphous Silicon and Its Alloys = 26 Ⅳ. Effect of Novel Parameters = 36 Ⅴ. Deposition Mechanisms and Controversial Aspects = 52 References = 57 2. Diagnostics of Amorphous Silicon (a-Si) Plasma Processes / Guy Turban ; Bernard Dr e ´ villon ; Dimitri S. Mataras ; Dimitri E. Rapakoulias = 63 Ⅰ. Introduction = 64 Ⅱ. Optical Diagnostics = 65 Ⅲ. Mass Spectrometry and Langmuir Probes = 82 Ⅳ. In Situ Studies of the Growth of a-Si : H by Spectroellipsometry = 102 References = 125 3. Deposition Conditions and the Optoelectronic Properties of a-Si : H Alloys / C. M. Fortmann = 131 Ⅰ. Introduction = 131 Ⅱ. General Comments on Amorphous Alloy Growth = 133 Ⅲ. Relationship Between Mobility and Device Performance = 157 Ⅳ. Concepts of Electronic Transport in Amorphous Semiconductors = 171 Ⅴ. Summary and Conclusions = 171 References = 172 4. Reactor Design for a-Si : H Deposition / J e ´ r o ^ me Perrin = 177 Ⅰ. Introduction = 177 Ⅱ. Power Dissipation Mechanisms in Si H4 Discharges = 179 Ⅲ. Material Balance and Gas-Phase and Surface Physicochemistry = 193 Ⅳ. Concepts of Reactors for a-Si : H Deposition = 213 Ⅴ. Summary and Conclusions = 235 References = 237 5. Optoelectronic Properties of Amorphous Silicon Using the Plasma-Enhanced Chemical Vapor Deposition(PECVD) Technique / Arun Madan = 243 Ⅰ. Introduction = 243 Ⅱ. Effect on Properties of A-Sih Due to Parametric Variations Using the PECVD Technique = 247 Ⅲ. Alternative Deposition Techniques = 271 Ⅳ. Surface States, Interface States, and Their Effect on Device Performance = 272 Ⅴ. Summary = 280 References = 280 6. Amorphous-Silicon-Based Devices / Yoshihiro Hamakawa ; Wen Ma ; Hiroaki Okamoto = 283 Ⅰ. Introduction = 283 Ⅱ. Significant Advantages of a-Si in Its Alloys as a New Optoelectronic Material = 284 Ⅲ. Progress in Amorphous Silicon Solar Cell Technology = 294 Ⅳ. Integrated Photosensor and Color Sensor = 303 Ⅴ. Aspect of a-Si Imaging Device Applications = 307 Ⅵ. a-Si Electrophotographic Applications = 308 Ⅶ. Visible-Light Thin-Film Light-Emitting Diode(TFLED) = 309 References = 312 Index = 315