Microcrystalline and nanocrystalline semiconductors : Symposium F held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.
| 000 | 01117pamuuu200277 a 4500 | |
| 001 | 000000533255 | |
| 003 | OCoLC | |
| 005 | 19970616140015.0 | |
| 008 | 950125s1995 paua b 101 0 eng | |
| 010 | ▼a 95002168 | |
| 020 | ▼a 1558992596 | |
| 040 | ▼a DLC ▼c DLC | |
| 049 | ▼a ACSL ▼l 121025056 | |
| 050 | 0 0 | ▼a TK7871.85 ▼b .M534 1995 |
| 082 | 0 0 | ▼a 621.3815/2 ▼2 20 |
| 090 | ▼a 621.38152 ▼b M626 | |
| 245 | 0 0 | ▼a Microcrystalline and nanocrystalline semiconductors : ▼b Symposium F held November 29-December 2, 1994, Boston, Massachusetts, U.S.A. / ▼c editors, Robert W. Collins ... [et al.]. |
| 260 | ▼a Pittsburgh, Pa. : ▼b Materials Research Society, ▼c c1995. | |
| 300 | ▼a xxiv, 1066 p. : ▼b ill. ; ▼c 24 cm. | |
| 490 | 1 | ▼a Materials Research Society symposium proceedings, ▼x 0272-9172 ; ▼v v. 358 |
| 504 | ▼a Includes bibliographical references and indexes. | |
| 650 | 0 | ▼a Semiconductors ▼x Congresses. |
| 650 | 0 | ▼a Silicon crystals ▼x Congresses. |
| 700 | 1 | ▼a Collins, Robert W. |
| 710 | 2 | ▼a Materials Research Society. ▼b Meeting ▼d (1994 : ▼c Boston, Mass.). ▼b Symposium F. |
| 830 | 0 | ▼a Materials Research Society symposia proceedings ; ▼v v. 358. |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 과학도서관/Sci-Info(2층서고)/ | 청구기호 621.38152 M626 | 등록번호 121025056 (2회 대출) | 도서상태 대출가능 | 반납예정일 | 예약 | 서비스 |
컨텐츠정보
책소개
The symposium was held during the 1994 Fall Meeting of the Materials Research Society. Broadly interdisciplinary, it brought together materials scientists and engineers, condensed matter physicists, physical and electro-chemists, and electrical engineers to share their recent advances in four interrelated materials fields: semiconductor nanocrystals, porous silicon; nanocrystalline, microcrystalline, and polycrystalline films; and single crystal quantum structures (including dots, wires and wells). Annotation copyright Book News, Inc. Portland, Or.
정보제공 :
목차
CONTENTS PREFACE = xix MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS = xxv PART Ⅰ: THEORY OF MOLECULAR CLUSTERS, NANOCRYSTALS, AND POROUS SILICON FIRST-PRINCIPLES CALCULATION OF THE OPTICAL PROPERTIES OF NANOCRYSTALLINE SILICON / Masahiko Hirao = 3 THEORY OF THE PHYSICAL PROPERTIES OF Si NANOCRYSTALS / M. Lannoo ; C. Delerue ; G. Allan ; E. Martin = 13 CALCULATION OF THE ELECTRONIC STRUCTURE OF SILICON NANOCRYSTALS / Nicola A. Hill ; K. Birgitta Whaley = 25 ELECTRONIC PROPERTIES OF POROUS SILICON / M. R. Beltran ; J. Tag u ·· e n ~ a-Martinez ; M. Cruz ; C. Wang = 31 EFFECT OF GEOMETRICAL IRREGULARITES ON THE BAND GAP OF POROUS SILICON / B. Sapoval ; S. Russ = 37 EFFECTIVE DIELECTRIC FUNCTION OF POROUS SILICON: THE TRANSVERSE COMPONENT / J. E. Lugo ; J. A. del R i ´ o ; J. Tag u ·· e n ~ a-Mart i ´ nez ; J. A. Ochoa-Tapia = 43 OPTICAL CHARACTERIZATION OF AN ARRAY OF QUANTUM WIRES / G. Gumbs = 49 ELECTRONIC AND STRUCTURAL PROPERTIES OF Si4 6 : A NOVEL SOLID OF SILICON FULLERENES / Susumu Saito ; Atsushi Oshiyama = 55 ELECTRONIC PROPERTIES OF SILICON - M BINARY CLUSTERS (M ＝ C ＆ Na) / A. Nakajima ; K. Nakao ; M. Gomei ; R. Kishi ; S. lwata ; K. Kaya = 61 A MONTE CARLO SIMULATION OF THE STILLINGER-WEBER MODEL FOR Si-Ge ALLOYS / Mohamed Laradji ; D. P. Landau ; B. D u ·· nweg = 67 A TIGHT-BINDING MODEL FOR MOLECULAR DYNAMICS OF CARBON-HYDROGEN SYSTEMS / G. Kopidakis ; C. Z. Wang ; C. M. Soukoulis ; K. M. Ho = 73 PART Ⅱ: SYNTHESIS AND PROPERTIES OF GROUP Ⅳ MOLECULAR AND SOLID STATE CLUSTERS AND NANOCRYSTALS LUMINESCENCE PROPERTIES OF SILICON CLUSTERS: CHAIN, LADDER AND CUBIC STRUCTURES / Yoshihiko Kanemitsu = 81 Si1 -x Gex Y ALLOY NANOCLUSTER MATERIALS CHEMICAL VAPOR DEPOSITION OF Si₂ H6 /Ge₂ H6 MIXTURES IN ZEOLITE Y / O ·· mer Dag ; Alex Kuperman ; Geoffrey A. Ozin = 87 FABRICATION OF PHOTOLUMINESCENT AMORPHOUS PILLAR SILICON STRUCTURES / S. Lazarouk ; S. Katsuba ; N. Kazuehits ; G. de Cesare ; S. La Monica ; G. Maiello ; E. Proverbio ; A. Ferrari = 93 CONTROL OF THE CRYSTALLITE SIZE AND DIELECTRIC TISSUE IN nc-Si/SiO₂PLASMA CVD FILMS: ORIGIN OF THE GREEN/BLUE AND THE EFFICIENCY OF THE RED PHOTOLUMINESCENCE / S. Vep r ∨ ek ; Th. Wirschem ; M. R u ·· ckschloβ ; H. Tamura ; J. Oswald = 99 A NEW METHOD FOR PREPARING Ge NANO-CRYSTALLITES EMBEDDED IN Si Ny MATRICES / Kunji Chen ; Xeuexuan Qu ; Xinfan Huang ; Zhifeng Li ; Duan Feng = 111 RARE-EARTH DOPED SILICON-RICH STLICA: EVIDENCE FOR ENERGY TRANSFER BETWEEN SILICON MICROCLUSTERS AND RARE-EARTH IONS / A. J. Kenyon ; P. F. Trwoga ; M. Federighi ; C. W. Pitt = 117 GENERATION AND STRUCTURAL ANALYSIS OF SILICON NANOPARTICLES / Ping Li ; Klaus Sattler = 123 LUMINESCENCE FROM Si Ox NANOCLUSTERS / Paul Wickboldt ; Hyeonsik M. Cheong ; Dawen Pang ; Joseph H. Chen ; William Paul = 127 BLUE LIGHT EMISSION FROM GERMANIUM ULTRAFINE PARTICLES BY THE GAS EVAPORATION TECHNIQUE / Shinji Nozaki ; S. Sato ; A. Denda ; H. Ono ; H. Morisaki = 133 Ge NANOCRYSTALS GROWN ON Si(111) BY MOLECULAR BEAM EPITAXY WITH AND WITHOUT CaF₂ BUFFER LAYERS / Peter W. Deelman ; Thomas Thundat ; Leo J. Schowalter = 139 FORMATION OF SUBMICRON SINGLE CRYSTAL PARTICLES AND DOTS BY LASER ABLATION / Hong Wu ; R. D. Vispute ; J. Narayan = 145 POSSIBLE MECHANISMS FOR PHOTOLUMINESCENCE IN SPARK-PROCESSED Si / R. E. Hummel ; M. H. Ludwig ; S.-S. Chang = 151 VISIBLE PHOTOLUMINESCENCE FROM SILICON NANOCONSTRICTIONS FORMED BY HEAVY HYDROGEN IMPLANTATION AND ANNEALING TREATMENTS / L. Pavesi ; D. Bisero ; F. Corni ; S. Frabboni ; R. Tonini ; G. Ottaviani = 157 CONTROL OF AND MECHANISMS FOR ROOM TEMPERATURE VISIBLE LIGHT EMISSION FROM SILICON NANOSTRUCTURES IN SiO₂ FORMED BY Si+ ION IMPLANTATION / T. Komoda ; J. P. Kelly ; A. Nejim ; K. P. Homewood ; P. L. F. Hemment ; B. J. Sealy = 163 COMPOUND SEMICONDUCTOR NANOCRYSTALS FORMED BY SEQUENTIAL ION IMPLANTATION / C. W. White ; J. D. Budai ; J. G. Zhu ; S. P. Withrow ; R. A. Zuhr ; Y. Chen ; D. M. Hembree, Jr. ; R. H. Magruder ; D. O. Henderson = 169 SEMICONDUCTOR NANOCRYSTALS FORMED IN SiO₂ BY ION IMPLANTATION / Jane G. Zhu ; C. W. White ; J. D. Budai ; S. P. Withrow ; Y. Chen = 175 CORRELATION OF SIZE AND PHOTOLUMINESCENCE FOR Ge NANOCRYSTALS IN SiO₂ MATRICES / C. M. Yang ; K. V. Shcheglov ; M. L. Brongersma ; A. Polman ; H. A. Atwater = 181 CORRELATION BETWEEN QUANTUM NANOCRYSTAL PARTICLE SIZE AND PHOTOLUMINESCENCE USING RAMAN SCATTERING / E. W. Forsythe ; E. A. Whittaker ; F. H. Pollak ; B. S. Sywe ; G. S. Tompa ; B. A. Khan ; J. Khurgin ; H. W. H. Lee ; F. Adar ; H. Schaffer = 187 INFLUENCE OF THE DISPERSION OF THE SIZE OF THE Si NANOCRYSTALS ON THEIR EMISSION SPECTRA / J. B. Khurgin ; E. W. Forsythe ; S. I. Kim ; B. S. Sywe ; B. A. Khan ; G. S. Tompa = 193 LATTICE RELAXATION EFFECTS IN Si AND GaAs NANOCRYSTALS / X. S. Zhao ; Y. R. Ge ; J. Schroeder ; P. D. Persans = 199 NONLINEAR OPTICAL PROPERTIES OF SILICON NANOCRYSTALLITES: EFFECTS OF PASSIVATION / A. A. Seraphin ; F. J. Aranda ; E. Werwa ; D. V. G. L. N. Rao ; K. D. Kolenbrander = 205 PART Ⅲ: SYNTHESIS AND PROPETIES OF Ⅱ-Ⅵ, AND METAL SULFIDE, HALIDE, AND OXIDE NANOCRYSTALS NANOCRYSTALS OF Ⅱ-Ⅵ SEMICONDUCTOR MATERIALS / Horst Weller ; Tobias Vossmeyer ; Alexander Eychm u ·· ller ; Alf Mews, Lynne Katsikas ; G u ·· nter Reck = 213 SYNTHESIS, STRUCTURAL CHARACTERIZATION, AND OPTICAL SPECTROSCOPY OF CLOSE PACKED CdSe NANOCRYSTALLITES / C. R. Kagan ; C. B. Murray ; M. G. Bawendi = 219 X-RAY ABSORPTION SPECTROSCOPY AND OPTICAL ABSORPTION STUDIES OF THE GROWTH OF CdS NANOCRYSTALS IN GLASS / P. D. Persans ; L. B. Lurio ; J. Pant ; R. J. Olsson ; H. Yukselici ; T. M. Hayes = 225 RAMAN, ABSORPTION, AND PHOTOLUMINESCENCE STUDIES OF A Cd Sx Se1 -x SEMICONDUCTOR DOPED COLOR GLASS / S. H. Morgan ; Z. Pan ; R. Mu ; B. H. Long = 229 RESONANT RAMAN SCATTERING IN Cd Sx Se1 -x NANOCRYSTALS: ELECTRON-PHONON COUPLING / M. Silvestri ; L. W. Hwang ; P. Persans ; J. Schroeder = 235 TRAP STATES IN Cd(S,Se) NANOCRYSTALS PROBED BY PHOTOMODULATION SPECTROSCOPY / Kevin L. Stokes ; Peter D. Persans = 241 TRANSPARENT SOL-GEL MATRICES DOPED WITH QUANTUM SIZED PbS PARTICLES / T. Gacoin ; J. P. Boilot ; M. Gandais ; C. Ricolleau ; M. Chamarro = 247 SYNTHESIS OF PbS SEMICONDUCTOR MICROCRYSTALLITES IN SITU IN REVERSE MICELLES / O. de Sanctis ; K. Kadono ; H. Tanaka ; T. Sakaguchi = 253 MORPHOLOGY-DEPENDENT SPECTROELECTROCHEMICAL BEHAVIOR OF PbS NANOPARTICULATE FILMS GROWN UNDER SURFACTANT MONOLAYERS / Yongchi Tian ; Changjun Wu ; Nicholas Kotov ; Janos H. Fendler = 259 OPTICAL PROPERTIES OF LEAD SULFIDE NANOCLUSTERS: EFFECTS OF SIZE, STOICHIOMETRY AND SURFACE ALLOYING / D. E. Bliss ; J. P. Wilcoxon ; P. P. Newcomer ; G. A. Samara = 265 QUANTUM CONFINEMENT IN COATED SEMICONDUCTOR NANO-PARTICLES / H. S. Zhou ; H. Sasahara ; I. Honma ; H. Komiyarma ; H. Sasabe ; J. W. Haus = 271 OPTICAL FEATURES OF NANOSIZE IRON AND MOLYBDENUM SULFIDE CLUSTERS / J. P. Wilcoxon ; G. Samara ; P. Newcomer = 277 SOME NATURAL THREE- AND LOWER-DIMENSIONAL SEMICONDUCTOR SYSTEMS WITH METAL-HALIDE UNITS / George C. Papavassiliou ; I. B. Koutselas ; A. Terzis ; C. P. Raptopoulou = 283 LUMINESCENCE AND RESONANCE RAMAN SPECTROSCOPY OF INDIRECT EXCITONS IN AgBr NANOCRYSTALS / S. Pawlik ; H. Stolz ; W. von der Osten = 289 QUANTUM CONFINEMENT EFFECTS ON 100-400 Å DIAMETER SILVER BROMIDE MICROCRYSTALS / Michal Ilana Freedhoff ; George McLendon ; Alfred Marchetti =301 CONTROLLED RECRYSTALLIZATION OF HEMATITE FROM TWO HIGHLY DIFFERENT PHASES OF FERRIC TRIHYDROXIDE / Georges Denes ; P. Kabro ; M. C. Madamba = 307 PART Ⅳ: SYNTHESIS, SURFACE EFFECTS, AND PROCESS/PROPERTY CORRELATIONS FOR POROUS SILICON EXTENDED QUANTUM MODEL FOR POROUS SILICON FORMATION / H. M u ·· nder ; St. Frohnhoff ; M. G. Berger ; M. Marso ; M. Th o ·· nissen ; R. Arens-Fischer ; H. L u ·· th = 315 NON-DESTRUCTIVE CHARACTERIZATION OF POROUS SILICON USING X-RAY REFLECTIVITY / E. Chason ; T. R. Guilinger ; M. J. Kelly ; T. J. Headley ; A. J. Howard = 321 FORMATION AND PROPERTIES OF POROUS Si SUPERLATTICES / M. G. Berger ; R. Arens-Fischer ; St. Frolmhoff ; C. Dieker ; K. Winz ; H. M u ·· nder ; H. L u ·· th ; M. Arntzen ; W. Theiss = 327 PREPARATION, PROPERTIES AND APPLICATIONS OF FREE-STANDING POROUS SILICON FILMS / J. von Behren ; L. Tsybeskov ; P. M. Fauchet = 333 THE FORMATION OF POROUS SILICON LAYERS FORMED IN A NON-AQUEOUS ELECTROLYTE / Melissa M. Rieger ; Paul A. Kohl = 339 COMBINED OPTICAL, SURFACE AND NUCLEAR MICROSCOPIC ASSESSMENT OF POROUS SILICON FORMED IN HF-ACETONITRILE / Z. C. Feng ; Z. Chen ; K. R. Padmanabhan ; K. Li ; A. T. S. Wee ; J. Lin ; K. L. Tan ; K. T. Yue ; A. Bhat ; A. Rohatgi = 345 THE EFFECT OF STARTING SILICON CRYSTAL STRUCTURE ON PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON / W. B. Dubbelday ; S. D. Russell ; K. L. Kavanagh = 351 PECULIARITY OF POROUS SILICON FORMED IN THE TRANSITION REGIME / S. Lazarouk ; V. Chumash ; E. Fazio ; S. La Monica ; G. Maiello ; E. Proverbio = 357 COMPARISON OF POROUS SILICON ETCHED GENTLY AND UNDER ILLUMINATION / Adam A. Filios ; Paphael Tsu = 363 EFFECT OF RAPID THERMAL OXIDATION ON BLUE AND RED LUMINESCENCE BANDS OF POROUS SILICON / S. Sen ; A. J. Kontkiewicz ; A. M. Kontkiewicz ; G. Nowak ; J. Siejka ; P. Sakthivel ; K. Ahmed ; P. Mukherjee ; S. Witanachchi ; A. M. Hoff ; J. Lagowski = 369 Er-IMPLANTED POROUS SILICON: A NOVEL MATERIAL FOR Si-BASED INFRARED LEDs / Fereydoon Namavar ; F. Lu ; C. H. Perry ; A. Cremins ; N. M. Kalkhoran ; J. T. Daly ; R. A. Soref = 375 POST-ANODIZATION IMPLANTATION AND CVD TECHIQUES FOR PASSIVATION OF POROUS SILICON / S. P. Duttagupta ; L. Tsybeskov ; P. M. Fauchet ; E. Ettedgui ; Y. Gao = 381 CHEMICAL MODIFICATION OF THE POROUS SILICON SURFACE / Eric J. Lee ; James S. Ha ; Michael J. Sailor = 387 INVESTIGATION OF CHEMICAL ADSORBATE EFFECTS ON BLUE AND RED EMITTING POROUS SILICON SAMPLES / Julie M. Rehm ; George L. McLendon ; Leonid Tsybeskov ; Philippe M. Fauchet = 393 FTIR STUDIES OF CH₃OH ON POROUS SILICON / John A. Glass, Jr. ; Edward A. Wovchko ; John T. Yates, Jr. = 399 PART Ⅴ: STRUCTURAL, OPTICAL, AND THERMAL PROPERTIES OF POROUS SILIICON SIZE, SHAPE, AND CRYSTALLINITY OF LUMINESCENT STRUCTURES IN OXIDIZED Si NANOCLUSTERS AND H-PASSIVATED POROUS Si / S. Schuppler ; S. L. Friedman ; M. A. Marcus ; D. L. Adler ; Y.-H. Xie ; F. M. Ross ; T. D. Harris ; W. L. Brown ; Y. J. Chabal ; P. J. Szajowski ; E. E. Chaban ; L. E. Brus ; P. H. Citrin = 407 RECIPROCAL SPACE ANALYSIS OF THE MICROSTRUCTURE OF LUMINESCENT AND NONLUMINESCENT POROUS SILICON FILMS / S. R. Lee ; J. C. Barbour ; J. W. Medernach ; J. O. Stevenson ; J. S. Custer = 417 DIMENSIONS OF LUMINESCENT POROUS SILICON BY THERMAL EFFUSION OF HYDROGEN / A. Nikolov ; V. Petrova-Koch ; G. Polisski ; F. Koch = 423 CONTRIBUTION OF THE NANOCRYSTALLITES AND THEIR INTERFACES TO THE OPTICAL RESPONSE OF POROUS SILICON LAYERS / U. Rossow ; U. Frotscher ; W. Richter ; H. Muender ; M. Thoennissen ; M. Berger = 429 PROBING OPTICAL TRANSITIONS IN POROUS SILICON BY REFLECTANCE SPECTROSCOPY IN THE NEAR INFRARED, VISIBLE AND UV / W. Theiβ ; R. Arens-Fischer ; M. Arntzen ; M. G. Berger ; S. Frohnhoff ; S. Hilbrich ; M. Wernke = 435 COMPARISON OF THE BAND GAP OF POROUS SILICON AS MEASURED BY PHOTOELECTRON SPECTROSCOPY AND PHOTOLUMINESCENCE / T. van Buuren ; S. Eisebitt ; S. Patitsas ; S. Ritchie ; T. Tiedje ; J. F. Young ; Yuan Gao = 441 PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF POROUS SILICON / A. Kux ; M. Ben Chorin = 447 ELECTRON SPIN RESONANCE INVESTIGATIONS ON POROUS SILICON / B. K. Meyer ; D. M. Hofmann ; P. Christmann ; W. Stadler ; A. Nikolov ; A. Scharmann ; A. Hofstaetter = 453 THE SPECTROSCOPY OF POROUS SILICON / P. D. J. Calcott ; K. J. Nash ; L. T. Canham ; M. J. Kane = 465 LOCALIZED NATURE OF PHOTOLUMINESCENCE FROM ANODICALLY OXIDIZED POROUS SILICON / T. Ito ; K. Furuta ; T. Yoneda ; O. Arakaki ; A. Hatta ; A. Hiraki = 477 THE VISIBLE AND THE INFRARED LUMINESCENCE BANDS AS A TOOL FOR CHARACTERIZATION OF THE POROUS SILICON BANDSTRUCTURE / V. Petrova-Koch ; T. Muschik ; G. Polisski ; D. Kovalev = 483 ORIGIN OF THE INFRARED BAND FROM POROUS SILICON / G. Mauckner ; J. Hamann ; W. Rebitzer ; T. Baier ; K. Thonke ; R. Sauer = 489 LIGHT CONTROLLED PHOTOLUMINESCENCE RELAXATION IN POROUS SILICON / R. Czaputa ; R. Fritzl ; A. Popitsch = 495 QUENCHING AND RECOVERY OF THE PHOTOLUMINESCENCE IN POROUS Si AFTER PULSE IR IRRADIATION / J. Diener ; S. Ganichev ; M. Ben-Chorin ; D. Kovalev ; V. Petrova-Koch ; F. Koch = 501 PHOTOLUMINESCENCE QUENCHING OF POROUS SILICON / Diana L. Fisher ; Aurilee Gamboa ; Jessica Harper ; Jeffrey M. Lauerhaas ; Michael J. Sailor = 507 LOCALIZED STATES AND POROUS SILICON LUMINESCENCE / V. M. Dubin ; F. Ozanam ; J.-N. Chazalviel = 519 CARRIER DYNAMICS IN POROUS SILICON: FROM THE FEMTOSECOND TO THE SECOND / Philippe M. Fauchet = 525 EXCITATION TIME DEPENDENCE OF LUMINESCENCE DECAY IN THERMALLY OXIDIZED POROUS Si / K. Shiba ; S. Miyazaki ; M. Hirose = 537 SIMULTANEOUS DETECTION OF RADIATIVE AND NON-RADIATIVE RECOMBINATION IN POROUS SILICON / Vytautas Grivickas ; Jan Linnros = 543 EXPERIMENTS AND MONTE CARLO SIMULATIONS ON THE RECOMBINATION DYNAMICS IN POROUS SILICON / L. Pavesi ; H. Eduardo Roman = 549 TEMPERATURE DEPENDENCE OF STRESSES AND H DISORPTION IN POROUS SILICON / Y. Diawara ; J. F. Currie ; A. Yelon ; V. Petrova-Koch ; A. Nikolov = 555 THE THERMAL CONDUCTIVITY OF POROUS SILICON / W. Lang ; A. Drost ; P. Steiner ; H. Sandmaier = 561 PART Ⅵ: ELECTRONIC AND ELECTROCHEMICAL PROPERTIES AND APPLICATIONS OF NANOCRYSTALS AND POROUS SILICON MODELLING THE MULTIPLICITY OF CONDUCTANCE STRUCTURES IN CLUSTERS OF SILICON QUANTUM DOTS / D. W. Boeringer ; R. Tsu = 569 ELECTRICAL TRANSPORT IN MESOPOROUS SILICON LAYERS / M. Ben-Chorin ; S. Grebner ; F. Wang ; R. Schwarz ; A. Nikolov ; F. Koch = 575 INVESTIGATION OF ELECTRONIC PROPERTIES OF POROUS SILICON BY THE PULSED SURFACE PHOTOVOLTAGE TECHNIQUE / Th. Dittrich ; H. Flietner = 581 PHOTOVOLTAIC CHARACTERIZATION OF TRAPPING IN POROUS SILICON / D. W. Boeringer ; R. Tsu = 587 INVESTIGATION OF EFFICIENCY IMPROVEMENT ON SILICON SOLAR CELLS DUE TO POROUS LAYERS / Gregory Sun ; Yuxin Li ; Yicheng Lu ; Babar Khan ; Gary S. Tompa = 593 GAS SENSOR USING AN ALUMINIUM-POROUS SILICON JUNCTION APPLICATION TO THE DETECTION OF NON-ZERO MOLECULAR DIPOLE MOMENT / D. Stievenard ; D. Deresmes = 599 POROUS SILICON USED AS AN INITIATOR IN POLYMERIZATION REACTIONS / Julie L. Heinrich ; Alice- Lee ; Michael J. Sailor = 605 SPECTRAL RESPONSE OF PHOTOELECTROCHEMICAL CELLS BASED ON NANOCRYSTALLINE SEMICONDUCTOR FILMS / M. C. Rossi ; R. Vincenzoni ; F. Galluzzi = 611 PART Ⅶ: ELECTROLUMINESCENT APPLICATIONS OF NANOCRYSTALS AND POROUS SILICON ON THE ORIGIN OF THE ELECTRICALLY-INDUCED SPECTRAL SHIFF OF POROUS SILICON PHOTO- AND ELECTRO- LUMINESCENCE / A. Bsiesy ; M. A. Hory ; F. Gaspard ; R. Herino ; M. Ligeon ; F. Muller ; R. Romestain ; J. C. Vial = 619 POROUS SILICON AS AN ULTRAVIOLET LIGHT SOURCE / F. Kozlowski ; B. Huber ; P. Steiner ; H. Sandmaier ; W. Lang = 629 BLUE AND GREEN ELECTROLUMINESCENCE FROM POROUS MATERIALS / H. Mimura ; T. Matsumoto ; Y. Kanemitsu = 635 NEAR-INFRARED EMISSION FROM A POROUS SILICON DEVICE / J. Penczek ; A. Knoesen ; H. W. H. Lee ; R. L. Smith = 641 MICRON-SIZE AND SUBMICRON-SIZE LIGHT-EMITTING POROUS SILICON STRUCTURES / S. P. Duttagupta ; P. M. Fauchet ; C. Peng ; S. K. Kurinec ; K. Hirschman ; T. N. Blanton = 647 LIGHT EMISSION VERSUS EXCITATION FROM POROUS STRUCTURES IN ION-IMPLANTED SILICON / E ´ . V a ´ zsonyi ; I. B a ´ rsony ; T. Lohner ; M. Fried ; J. Erosty a ´ k ; M. R a ´ cz ; F. P a ´ szti = 653 VISIBLE ELECTROLUMINESCENCE FROM Al-POROUS SILICON REVERSE BIAS DIODES FORMED ON THE BASE OF DEGENERATE N-TYPE SILICON / S. Lazarouk ; V. Bondarenko ; P. Pershukevich ; S. La Monica ; G. Maiello ; A. Ferrari = 659 DEPOSITING METALS INTO POROUS SILICON-THE IMPACT ON LUMINESCENCE / P. Steiner ; F. Kozlowski ; W. Lang = 665 THE INFLUENCE OF LOCAL AMBIENT ATMOSPHERE ON THE ELECTROLUMINESCENT STABILITY OF POROUS SILICON DIODES / Libing Zhang ; Jeffery L. Coffer ; Bruce E. Gnade ; DaXue Xu ; Russell F. Pinizzotto = 671 STABILIZATION OF ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF POROUS N-SILICON BY CHEMICAL OXIDATION IN H₂O₂ / F. Kozlowski ; W. Wagenseil ; P. Steiner ; W. Lang = 677 PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN PARTIALLY OXIDIZED POROUS SILICON / L. Tsybeskov ; S. P. Duttagupta ; P. M. Fauchet = 683 CARRIER TRANSPORT IN POROUS SILICON LIGHT-EMITTING DIODES / C. Peng ; P.M. Fauchet ; K. D. Hirschman ; S. K. Kurinec = 689 OPTOELECTRONIC EFFECTS IN POROUS SILICON RELATED TO THE VISIBLE LUMINESCENCE MECHANISM / N. Koshida ; H. Koyama ; T. Ozaki ; M. Araki ; T. Oguro ; H. Mizuno = 695 UV-VISIBLE-IR ELECTROLUMINESCENCE FROM Si AND Ge NANOCRYSTALS IN A WIDER BANDGAP MATRIX / G. S. Tompa ; D. C. Morton ; B. S. Sywe ; Y. Lu ; E. W. Forsythe ; J. A. Ott ; D. Smith ; J. Khurgin ; B. A. Khan = 701 SIZE DEPENDENT ELECTROLUMINESCENCE FROM CdSe NANOCRYSTALLITES (QUANTUM DOTS) / B. O. Dabbousi ; O. Onitsuka ; M. F. Rubner ; M. G. Bawendi = 707 ELECTROLUMINESCENCE OF Yb-DOPED InP / A. K. Alshawa ; H. J. Lozykowski ; I. Brown = 713 PART Ⅷ: NANOCRYSTALLIN AND MICROCRYSTALLINE FILMS AND THEIR APPLICATIONS PREPARATION OF NANOCRYSTALLINE SILICON BY PULSED PLASMA PROCESSING / S. Oda ; M. Otobe = 721 MICROCRYSTALLINE SILICON THIN FILM GROWTH AND SIMULTANEOUS ETCHING OF AMORPHOUS MATERIAL / M. Heintze ; R. Zedlitz ; W. Westlake = 733 GRAIN GROWTH IN DISPERSIONS OF μc-Si IN a-Si:H / M. Taguchi ; S. Wagner = 739 LARGE GRAIN SIZE AND HIGH DEPOSITION RATE FOR MICROCRYSTALLINE SILICON PREPARED BY VHF-GD / P. Hapke ; F. Finger ; M. Luysberg ; R. Carius ; H. Wagner = 745 STRUCTURAL AND ELECTRICAL PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON GROWN BY 70 MHz AND 13.56 MHz PECVD / R. Fl u ·· ckiger ; J. Meier ; G. Crovini ; F. Demichelis ; F. Giorgis ; C. F. Pirri ; E. Tresso ; J. Pohl ; V. Rigato ; S. Zandolin ; F. Caccavale = 751 SPIN RESONANCE STUDIES ON FREE ELECTRONS AND DEFECTS IN MICROCRYSTALLINE SILICON / C. Malten ; F. Finger ; P. Hapke ; T. Kulessa ; C. Walker ; R. Carius ; R. Fl u ·· ckigar ; H. Wagner = 757 PREPARATION AND OPTICAL PROPERTIES OF ULTRATHIN SILICON FILMS / R. W. Collins ; Hien V. Nguyen ; Ilsin An ; Yiwei Lu ; M. Wakagi = 763 LUMINESCENT HYDROGENATED NANOCRYSTALLINE SILICON FILMS / Y. Wang ; F. Yun ; X. B. Liao ; G. Q. Pan ; G. L. Kong ; B. Yang = 769 THIN FILMS OF SEMICONDUCTING SnSi ALLOYS GROWN BY PULSED LASER DEPOSITION / Randolph E. Treece ; J. S. Horwitz ; D. B. Chrisey ; J. Tang ; R. S. Williams = 775 DEPOSITION OF MICROCRYSTALLINE Si,Ge (μc-Si,Ge) ALLOYS BY REACTIVE MAGNETRON SPUTTERING / S. M. Cho ; D. Wolfe ; S. S. He ; K. Christensen ; D. M. Maher ; G. Lucovsky = 781 THE STRUCTURE AND COMPOSITION OF DOPED SILICON OXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY SPATIAL SEPARATION TECHNIQUES / R. Martins ; M. Vieira ; I. Ferreira ; E. Fortunato = 787 STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF μc-SiC:H THIN FILMS DEPOSITED BY THE VHF-GD / Roger Fl u ·· ckiger ; J. Meier ; A. Shah ; J. Pohl ; M. Tzolov ; R. Carius = 793 MICROCRYSTALLINE β-SiC GROWTH ON Si BY ECR-CVD AT 500℃ / Kuan-Lun Cheng ; Chih-Chien Liu ; Huang-Chung Cheng ; Chiapyng Lee ; Tri-Rung Yew = 799 POROUS SILICON: A POSSIBLE BUFFER LAYER FOR DIAMOND GROWTH ON SILICON SUBSTRATES / Zhaohui Liu ; B. Q. Zong ; Zhangda Lin = 805 CHARACTERIZATION OF FLAME GROWN DIAMOND FILMS BY LUMINESCENCE AND EPR / L. Pereira ; E. Pereira ; C. Tavares ; M. Neto ; A. Cremades ; J. Piqueras ; J. Jimenez ; P. Martin = 811 MICROCRYSTALLINE CUBIC BORON NITRIDE/AMORPHOUS HYDROGENATED BORON NITRIDE MIXED PHASE THIN FILMS / Shu-Han Lin ; Bernard J. Feldman = 817 PART Ⅸ: MULTILAYERED AND MICROSTRUCTURED FILMS VISIBLE LIGHT EMISSION IN SILICON-INTERFACE ADSORBED GAS SUPERLATTICES / Raphael Tsu ; Jonder Morais ; Amanda Bowhill = 825 OBSERVATION OF QUANTUM SIZE DEPENDENT BLUE SHIFT IN THE LUMINESCENCE OF RECRYSTALLIZED Si/Si Nx SUPERLATTICES / D. A. Gr u ·· tzmacher ; E. F. Steigmeier ; H. Auderset ; R. Morf ; B. Delley ; R. Wessicken = 833 TRANSMISSION ELECTRON MICROSCOPY OBSERVATION OF CONSTRAINED CRYSTALLIZATION IN a-Si:H/a-Si Nx :H MULTILAYER FILM / Xinfan Huang ; Weihua Shi ; Kunji Chen ; Shidong Yu ; Duan Feng = 839 ELECTRICAL CHARACTERISTICS OF ULTRA-THIN MULTI-LAYERS OF POLY-Si AND SILICON DIOXIDE / Kevin K. Chan ; Young H. Lee ; Carol L. Stanis = 845 LUMINESCENCE PROPERTIES OF SILICON OXYNITRIDE FILMS / T. Fischer ; T. Muschik ; R. Schwarz ; D. Kovalev ;. F. Koch = 851 X-RAY DIFFRACTION STUDY OF CLUSTERS IN a-tC FILMS / L. J. Mart i ´ nez-Miranda ; T. A. Friedmann ; J. P. Sullivan ; M. P. Siegal ; T. W. Mercer ; N. J. DiNardo ; F. Fang = 857 SURFACE STRUCTURE OF TETRAHEDRAL-COORDINATED AMORPHOUS DIAMOND-LIKE CARBON FILMS GROWN BY PULSED LASER DEPOSITION / T. W. Mercer ; N. J. DiNardo ; L. J. Martiez-Miranda ; F. Fang ; T. A. Friedmann ; J. P. Sullivan ; M. P. Siegal = 863 PART Ⅹ: PREPARATION, CHARACTERIZATION, AND APPLICATIONS OF POLYCRYSTALLINE FILMS CONTROL OF GRAIN SIZE AND TEXTURE OF POLY-Si WITH ATOMIC HYDROGEN UNDER IN SITU ELLIPSOMETRIC OBSERVATION / K. Nakamura ; T. Akasaka ; D. He ; I. Shimizu =871 EARLY STAGE OF POLYCRYSTALLINE GROWTH OF Ge AND SiGe BY REACTIVE THERMAL CVD FROM GeF₄ AND Si₂ H6 / Jun-Ichi Hanna ; Takayuki Ohuchi ; Masaji Yamamoto = 877 THIN FILM POLYCRYSTALLINE Si BY CS SOLUTION GROWTH TECHNIQUE / Richard L. Wallace ; Wayne A. Anderson ; K. M. Jones = 883 THE CRYSTALLINE QUALITY OF EPITAXIAL Si LAYERS SOLUTION GROWN ON POLYCRYSTALLINE Si SUBSTRATES / M. Albrecht ; B. Steiner ; Th. Bergmann ; A. Voigt ; W. Dorsch ; H. P. Strunk ; G. Wagner = 889 HIGH-QUALITY POLYCRYSTALLINE SILICON THIN FILM PREPARED BY A SOLID PHASE CRYSTALLIZATION METHOD / T. Baba ; T. Matsuyama ; T. Sawada ; T. Takahama ; K. Wakisaka ; S. Tsuda = 895 GRAIN BOUNDARY LOCATION-CONTROLLED POLY-Si FILMS FOR TFT DEVICES OBTAINED VIA NOVEL EXCIMER LASER PROCESS / H. J. Kim ; James S. Im = 903 LASER DOPING AND CRYSTALLIZATION OF AMORPHOUS SILICON THIN FILMS / J. B. Boyce ; G. B. Anderson ; P. G. Carey ; D. K. Fork ; R. I. Johnson ; P. Mei ; S. E. Ready ; P. M. Smith = 909 Nd-YAG LASER INDUCED CRYSTALLIZATION ON a-Si:H THIN FILMS / J. Carvalho ; I. Ferreira ; B. Fernandes ; J. Fidalgo ; R. Martins = 915 EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTORESPONSE OF CRYSTALLIZED HYDROGENATED AMORPHOUS SILICON FILMS / Nagarajan Sridhar ; D. D. L. Chung ; W. A. Anderson ; J. Coleman = 921 CARRIER TRANSPORT IN POLYCRYSTALLINE AND AMORPHOUS SILICON THIN FILM TRANSISTORS / T. Sameshima ; M. Sekiya ; M. Hara ; N. Sano ; A. Kohno = 927 STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF UNDOPED POLY-Si OXIDES / T. Sakamoto ; H. Tokioka ; S. Takanabe ; T. Kubota ; Y. Niwano ; Y. Goto ; H. Namizaki ; O. Wada ; H. Kurokawa = 933 EFFECT OF THE HETERO-INTERFACE ON THE PHOTORESPONSE OF a-Si/c-Si SOLAR CELLS / B. Jagannathan ; J. Yi ; R. Wallace ; W. A. Anderson = 939 DIFFUSION BEHAVIOR OF B-, As- AND Sb-DOPANTS IN THIN EPITAXIAL LAYERS / W. H. Krautschneider ; F. Lau ; H. Gossner ; H. Schaefer = 945 IMPROVED SiCr RESISTOR PERFORMANCE BY MEANS OF RAPID THERMAL PROCESSING / Pirouz Maghsoudnia = 951 PART XI: SINGLE CRYSTAL DOTS, WIRES, HETEROSTRUCTURES, AND SUPERLATTICES: THEORY AND EXPERIMENT SCALABLE FABRICATION AND OPTICAL CHARACTERIZATION OF nm Si STRUCTURES / Saleem H. Zaidi ; An-Shyang Chu ; S. R. J. Brueck = 957 FORMATION OF HIGHLY-UNIFORM AND DENSELY-PACKED ARRAYS OF GaAs DOTS BY SELECTIVE EPITAXY / Charles S. Tsai ; Robert B. Lee ; Kerry J. Vahala = 969 DETERMINATION OF THE STRAIN STATUS OF GaAs/AlAs QUANTUM WIRES AND QUANTUM DOTS / A. A. Darhuber ; G. Bauer ; P. D. Wang ; Y. P. Song ; C. M. Sotomayor Torres ; M. C. Holland = 975 PHOTOLUMINESCENCE OF A SINGLE-CRYSTAL SILICON QUANTUM WELL / Peter N. Saeta ; Alan C. Gallagher = 981 CARRIER CONFINEMENT EFFECTS IN EPITAXIAL SILICON QUANTUM WELLS PREPARED BY MOCVD / H. Paul Maruska ; R. Sudharsanan ; Eric Bretschneider ; Albert Davydov ; J. E. Yu ; Balu Pathangey ; K. S. Jones ; Timothy J. Anderson = 987 CHARACTERIZATION OF HIGH Ge CONTENT SiGe HETEROSTRUCTURES AND GRADED ALLOY LAYERS USING SPECTROSCOPIC ELLIPSOMETRY / A. R. Heyd ; S. A. Alterovitz ; E. T. Croke = 993 LUMINESCENCE PROPERTIES OF PERIODIC DISORDERED THIN LAYER GaAs/AlAs SUPERLATTICES / Ruth Y. A. Zhang ; J. Strozier ; C. Horton ; A. Ignatiev = 999 BAND OFFSETS OF In Asx P1 -x /InP STRAINED LAYER QUANTUM WELLS GROWN BY LP-MOVPE USING TBAs / M. Beaudoin ; R. A. Masut ; L. Isnard ; P. Desjardins ; A. Bensada ; G. L'Esp e ´ rance ; R. Leonelli = 1005 ELECTRONIC STATES IN Cd1 -x Znx Te/CdTe STRAINED LAYER COUPLED DOUBLE QUANTUM WELLS AND THEIR PHOTOLUMINESCENCE / Tiesheng Li ; H. J. Lozykowsid ; J. Reno = 1011 PHOTOLUMINESCENCE STUDIES OF [(CdSe)₁(ZnSe)₂]9 ZnSeTe MULTIPLE QUANTUM WELLS UNDER HIGH PRESSURE / Z. P. Wang ; Z. X. Liu ; H. X. Han ; J. Q. Zhang ; N. Li ; Z. L. Peng ; S. X. Yuan = 1017 EPITAXIAL GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE AND SILICON / K. Dovidenko ; S. Oktyabrsky ; J. Narayan ; M. Razeghi = 1023 CHARACTERIZATION OF THE THIN OXIDE-NITRIDE-OXIDE (ONO) STRUCTURE USING SPECTROSCOPIC ELLIPSOMETRY / Leo M. Asinovsky ; Steve Zierer = 1029 USE OF QUANTUM-WELL SUPERLATTICES TO INCREASE THE THERMOELECTRIC FIGURE OF MERIT: TRANSPORT AND OPTICAL STUDIES / L. D. Hicks ; X. X. Bi ; M. S. Dresselhaus = 1035 MAGNETIC PROPERTIES OF HEISENBERG ANTIFERROMAGNETIC EuTePbTe SUPERLATTICES / J. J. Chen ; G. Dresselhaus ; M. S. Dresselhaus ; G. Springholz ; G. Bauer = 1041 EFFECTS OF LANDAU LEVEL COUPLING ON THE MAGNETIC BAND STRUCTURE FOR ELECTRONS IN A TWO-DIMENSIONAL HEXAGONAL LATTICE / O. K u ·· hn ; V. Fessatidis ; H. L. Cui ; N. J. M. Horing = 1047 AUTHOR INDEX = 1053 SUBJECT INDEX = 1059