| 000 | 00904pamuuu200277 a 4500 | |
| 001 | 000000481389 | |
| 003 | OCoLC | |
| 005 | 19970513132124.0 | |
| 008 | 920430s1993 nyua b 001 0 eng | |
| 010 | ▼a 92016442 | |
| 015 | ▼a GB93-10694 | |
| 020 | ▼a 0070418535 | |
| 040 | ▼a DLC ▼c DLC ▼d UKM | |
| 049 | ▼a ACSL ▼l 421117044 | |
| 050 | 0 0 | ▼a TK7871.85 ▼b .M555 1993 |
| 082 | 0 0 | ▼a 621.3815/2 ▼2 20 |
| 090 | ▼a 621.38152 ▼b M627p | |
| 100 | 1 | ▼a Middleman, Stanley. |
| 245 | 1 0 | ▼a Process engineering analysis in semiconductor device fabrication / ▼c Stanley Middleman, Arthur K. Hochberg. |
| 260 | ▼a New York : ▼b McGraw-Hill, ▼c c1993. | |
| 300 | ▼a xvii, 774 p. : ▼b ill. ; ▼c 25 cm. | |
| 440 | 0 | ▼a McGraw-Hill chemical engineering series |
| 504 | ▼a Includes bibliographical references and index. | |
| 650 | 0 | ▼a Semiconductors ▼x Design and construction. |
| 653 | 0 | ▼a Semiconductors ▼a Production |
| 700 | 1 | ▼a Hochberg, Arthur K. |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 과학도서관/Sci-Info(2층서고)/ | 청구기호 621.38152 M627p | 등록번호 421117044 (16회 대출) | 도서상태 대출가능 | 반납예정일 | 예약 | 서비스 |
| No. 2 | 소장처 과학도서관/Sci-Info(2층서고)/ | 청구기호 621.38152 M627p | 등록번호 121112841 (1회 대출) | 도서상태 대출가능 | 반납예정일 | 예약 | 서비스 |
컨텐츠정보
책소개
Written primarily for chemical engineering students, the material included in this new text is an extension of upper level chemical engineering courses. Covering a range of processes in semiconductor device fabrication, the authors try to present traditional chemical engineering methodology in a non-traditional context. The text covers such topics as crystal growth and filtration and contains over 300 worked examples and problems.
정보제공 :
저자소개
Stanley Middleman(지은이)
<유체역학>
Arthur Hochberg(지은이)
목차
CONTENTS Preface = xv 1 Some Background in the Physics of Solids = 1 1-1 Introduction = 1 1-2 States of Matter = 2 1-3 Atomic Structures = 3 1-4 The Crystalline Solid = 7 1-5 Electronic Energy Bands in Solids = 13 1-6 Extrinsic Semiconductors(Doping) = 18 1-7 The Fermi-Dirac Distribution = 21 Problems = 25 References = 26 2 Device Background = 28 2-1 Introduction = 28 2-2 Materials Selection = 32 2-3 The pn Junction = 33 2-4 The Bipolar Transistor = 46 2-5 The Unipolar Transistor = 50 2-6 The Unit Operations of Semiconductor Device Fabrication = 56 2-7 A Process Sequence for Fabrication of a Bipolar Transistor = 59 Problems = 63 References = 65 3 Process Modeling = 67 3-1 Introduction = 67 3-2 A Process Model = 67 3-3 The Conservation Equations = 69 Problems = 107 References = 112 4 Cleanliness and Purity in the Process Environment : Filtration of Particulates = 114 4-1 Introduction = 114 4-2 Paniculate Control = 116 4-3 Clean Room Dynamics = 120 4-4 Filtration of Airborne Particles = 127 4-5 Pressure Drop across Fibrous Filters = 138 4-6 Porous Membrane Ultrafiltration = 141 4-7 Pressure Drop across Microporous Filters = 148 4-8 Use of Pressure Drop Measurements to Correct Filtration Models = 149 Problems = 150 References = 158 5 Particle Deposition and Removal = 161 5-1 Deposition of Particles on Surfaces = 161 5-2 The Physics of Adhesion of Particles to Surfaces = 175 5-3 Mechanism of Removal of Particles from Surfaces = 178 5-4 Analysis of Some Features of a Wafer Scrubber = 184 5-5 Some Other Aspects of Jet Dynamics = 190 Problems = 191 References = 195 6 Production and Maintenance of Purity in Process Chemicals = 197 6-1 Production of Ultrapure Nitrogen = 198 6-2 Maintenance of Chemical Purity through Recovery = 209 6-3 Purification of Silicon Tetrachloride = 215 Problems = 226 References = 228 7 Silicon Production = 230 7-1 Introduction = 230 7-2 The Siemens Process = 232 7-3 Czochralski Growth = 236 Problems = 252 References = 257 8 Oxidation of Silicon = 260 8-1 Introduction = 260 8-2 Dry Thermal Oxidation of Silicon = 261 8-3 Wet Thermal Oxidation of Silicon = 274 8-4 Mechanisms of Oxide Growth = 276 Problems = 277 References = 281 9 Microlithography = 285 9-1 Microstructure Fabrication = 285 9-2 Some Aspects of Organic Resist Materials = 288 9-3 The Kinetics of Development = 302 9-4 Resist Profile Development = 311 9-5 Spin Coating of Resist = 313 Problems = 320 References = 326 10 Doping = 330 10-1 Introduction = 330 10-2 Simple Fickian Diffusion Model of Doping = 331 10-3 Resistivity of Diffused Layers = 337 10-4 Doping Systems = 339 10-5 Dopant Redistribution = 360 10-6 Lateral Diffusion = 365 10-7 Concentration-Dependent Diffusion = 368 10-8 The Mathematics of Nonlinear Diffusion = 372 Problems = 379 References = 388 11 Etching = 392 11-1 Introduction = 392 11-2 The Plasma State = 394 11-3 Plasma Etching = 395 11-4 Plasma Reactor Dynamics = 397 11-5 Anisotropy : Ion Etching and Chemical Etching = 441 11-6 Wet Etching = 447 11-7 Anisotropy in Wet Etching = 462 Problems = 464 References = 474 12 Chemical Vapor Deposition = 478 12-1 Introduction = 478 12-2 Chemical Thermodynamics = 479 12-3 Chemical Kinetics = 497 12-4 Reactor Design for CVD = 539 12-5 Nonkinetic Aspects of Reactor Design = 562 Problems = 573 References = 590 13 Ion Implantation = 595 13-1 Is Ion Implantation Necessary? = 596 13-2 The Ion Implantation System = 597 13-3 The Implant Process = 611 Problems = 651 References = 654 14 Metallization = 662 14-1 Introduction = 662 14-2 Conductivity of Metals = 665 14-3 Physical Vapor Deposition = 681 Problems = 746 References = 752 Index = 757