| 000 | 00827camuuu200241 a 4500 | |
| 001 | 000000920462 | |
| 005 | 19990112143537.0 | |
| 008 | 931118s1994 njua b 001 0 eng | |
| 010 | ▼a 93042135 | |
| 020 | ▼a 0780310551 | |
| 040 | ▼a DLC ▼c DLC ▼d DLC ▼d 244002 | |
| 049 | 0 | ▼l 151007137 |
| 050 | 0 0 | ▼a TA2020 ▼b .G75 1994 |
| 082 | 0 0 | ▼a 621.044 ▼2 20 |
| 090 | ▼a 621.044 ▼b G858c | |
| 100 | 1 | ▼a Grill, Alfred. |
| 245 | 1 0 | ▼a Cold plasma in materials fabrication : ▼b from fundamentals to applications / ▼c Alfred Grill. |
| 260 | ▼a Piscataway, NJ : ▼b IEEE Press ; ▼a New York : ▼b Institute of Electrical and Electronics Engineers, ▼c c1994. | |
| 300 | ▼a xiii, 257 p. : ▼b ill. ; ▼c 24 cm. | |
| 504 | ▼a Includes bibliographical references and index. | |
| 650 | 0 | ▼a Plasma engineering. |
| 650 | 0 | ▼a Low temperature plasmas. |
| 650 | 0 | ▼a Manufacturing processes. |
소장정보
| No. | 소장처 | 청구기호 | 등록번호 | 도서상태 | 반납예정일 | 예약 | 서비스 |
|---|---|---|---|---|---|---|---|
| No. 1 | 소장처 세종학술정보원/과학기술실(5층)/ | 청구기호 621.044 G858c | 등록번호 151007137 (5회 대출) | 도서상태 대출불가(자료실) | 반납예정일 | 예약 | 서비스 |
컨텐츠정보
책소개
Cold plasma research and development activities, as well as its applications in materials processing have grown enormously in the past decade. Cold Plasma in Materials Fabrication is a comprehensive, up-to-date monograph which presents all aspects of cold, low-pressure plasmas.
The eight extensive chapters in this book cover the following topics:
- The main parameters and classifications of different types of plasma
- Reactions within cold plasmas and between cold plasmas and solid surfaces
- State-of-the-art methods for generation and diagnostics of cold plasmas and their application for processing of materials
정보제공 :
목차
CONTENTS PREFACE = xi LIST OF SYMBOLS = xiii 1 FUNDAMENTALS OF PLASMA = 1 1.1 Introduction = 1 1.2 Definition of Plasma = 2 1.3 Plasma Parameters = 5 1.3.1 The Degree of Ionization = 6 1.3.2 Plasma Temperature = 7 1.3.3 Debye Length = 12 1.3.4 Plasma Sheath = 13 1.3.5 Plasma Frequency = 16 1.4. Conditions for Plasma Existence = 17 1.5 Diffusion of Charged Particles in Plasma = 17 1.6 Plasma Types = 20 1.6.1 Thermal Plasmas = 21 1.6.2 Cold Plasmas = 21 1.7 Questions = 22 1.8 References = 23 2 COLD PLASMA GENERATION = 24 2.1 DC Glow Discharges = 24 2.1.1 Paschen's Law = 27 2.1.2 Characteristics of DC Glow Discharge = 28 2.2 Radio Frequency Discharges = 31 2.2.1 Self-bias in RF Plasmas = 35 2.2.2 RF Versus DC Plasmas = 38 2.3 Microwave Plasmas = 39 2.4 Electron Cyclotron Resonance Plasmas = 40 2.4.1 Advantages of ECR Plasmas = 43 2.5 Questions = 43 2.6 References = 44 3 PLASMA CHEMISTRY = 46 3.1 Introduction = 46 3.2 Definitions of Terms = 47 3.3 Chemical Reactions = 48 3.3.1 Homogeneous Reactions = 49 3.3.2. Heterogeneous Reactions = 62 3.4 The Chemical Reaction Chain = 65 3.5 Plasma Surface Interactions = 68 3.5.1 Ion and Electron Induced Chemical Reactions = 74 3.5.2 Energy Transfer = 78 3.5.3 Effects on Film Growth = 79 3.5.4 Plasma Induced Damage = 80 3.6 Questions = 83 3.7 References = 83 4 PLASMA REACTORS = 86 4.1 Plasma Systems = 86 4.1.1 Process Parameters = 87 4.1.2 Scale-up = 90 4.2 DC Reactors = 93 4.3 RF Reactors = 93 4.3.1 Electrodeless Discharges = 94 4.3.2 RF Discharges with Electrodes = 96 4.3.3 High-Density RF Reactors = 99 4.4 Microwave Reactors = 101 4.5 ECR Reactors = 104 4.6 Magnetically Enhanced Reactors = 107 4.7 Remote PECVD Reactors = 109 4.8 Reactor Clusters = 110 4.9 Questions = 111 4.10 References = 112 5 PLASMA DIAGNOSTICS = 114 5.1 Mass Spectrometry = 115 5.1.1 The Quadrupole Mass Spectrometer = 115 5.1.2 Plasma Analysis = 123 5.1.3 Summary = 127 5.2 Electrostatic Probes = 129 5.2.1 Probe Characteristics = 131 5.2.2 Probe Analysis = 133 5.3 Optical Methods = 137 5.3.1 Optical Emission Spectrometry = 138 5.3.2 Absorption Spectroscopy = 144 5.3.3 Laser Induced Fluorescence = 144 5.3.4 Summary = 146 5.4 Questions = 147 5.5 References = 148 6 COLD PLASMA PROCESSES FOR SURFACE MODIFICATION = 151 6.1 Introduction = 151 6.2 Surface Modification of Polymers = 153 6.3 Surface Cleaning and Ashing = 160 6.3.1 Cleaning = 160 6.3.2 Ashing = 163 6.4 Oxidation = 166 6.5 Surface Hardening = 170 6.5.1 Nitriding = 170 6.5.2 Carburizing = 175 6.5.3 Boriding = 176 6.6 Questions = 176 6.7 References = 176 7 DEPOSITION OF COATINGS BY PECVD = 180 7.1 Deposition of Organic Films = 180 7.1.1 Plasma Polymerization = 180 7.1.2 Polymerization Mechanisms = 183 7.1.3 Plasma Polymerization Parameters = 186 7.1.4 Examples of Plasma Polymerization = 189 7.2 Deposition of Inorganic Films = 191 7.2.1 Amorphous Hydrogenated Silicon = 192 7.2.2 Silicon Nitride = 195 7.2.3 Silicon Dioxide = 201 7.2.4 Silicon Carbide = 202 7.2.5 Diamondlike Carbon = 204 7.2.6 Diamond = 207 7.3 Questions = 209 7.4 References = 210 8 PLASMA ASSISTED ETCHING = 216 8.1 Introduction = 216 8.2 Plasma Etching = 219 8.2.1 Mechanisms of Plasma Etching = 220 8.2.2 Loading Effects = 221 8.3 Reactive Ion Etching = 223 8.3.1 Mechanisms of RIE = 224 8.3.2 Anisotropy = 225 8.3.3 Selectivity = 228 8.4 Etching of Specific Materials = 230 8.4.1 Semiconductors = 231 8.4.2 Metals = 235 8.4.3 Polymers = 237 8.5 Etching Induced Damage = 241 8.6 Questions = 242 8.7 References = 243 INDEX = 247 ABOUT THE AUTHOR = 257
