CONTENTS
1 SEMICONDUCTOR ELECTRONICS
1.1 Physics of Semiconductor Materials = 2
Band Model of Solids = 2
Holes = 8
Bond Model = 9
Donors and Acceptors = 11
Thermal-Equilibrium Statistics = 15
1.2 Free Carriers In Semiconductors = 28
Drift Velocity = 28
Mobility and Scattering = 32
Diffusion Current = 38
1.3 Device : Hall-Effect Magnetic Sensor = 42
Physics of the Hall Effect = 43
Integrated Hall-Effect Magnetic
Sensor = 45
Summary = 47
Problems = 50
2 SILICON TECHNOLOGY
2.1 The Silicon Planar Process = 58
2.2 Crystal Growth = 60
2.3 Thermal Oxidation = 66
Oxidation Kinetics = 67
2.4 Lithography and Pattern Transfer = 74
2.5 Dopant Addition and Diffusion = 79
Ion Implantation = 79
Diffuson = 83
2.6 Chemical Vapor Deposition = 94
Epitaxy = 94
Nonepitaxial Films = 96
2.7 Interconnection and Final Assembly = 103
Testing and Packaging = 106
2.8 Process Modeling = 107
2.9 Device: Integrated-Circuit Resistor = 110
Summary = 117
Problems = 119
3 METAL-SEMICONDUCTOR CONTACTS
3.1 Equilibrium in Electronic Systems = 126
Metal-Semiconductor System = 126
Inhomogeneously Doped Semiconductor = 128
3.2 Idealized Metal-Semiconductor Junctions = 129
Band Diagram = 129
Charge, Depletion Region, and Capacitance = 131
3.3 Current-Voltage Characteristics = 140
Schottky Barrier = 142
Mott Barrier = 145
3.4 Nonrectifying(Ohmic) Contacts = 147
Tunnel Contacts = 148
Schottky Ohmic Contacts = 149
3.5 Surface Effects = 152
Surface States = 152
Surface Effects on Metal-Semiconductor Contacts = 154
3.6 Metal-Semiconductor Devices : Schottky Diodes = 157
Summary = 160
Problems = 163
4 pn JUNCTIONS
4.1 Graded Impurity Distributions = 168
4.2 The pn Junction = 173
Step Junction = 177
Linearly Graded Junction = 185
4.3 Reverse-Biased pn Junctions = 188
4.4 Junction Breakdown = 193
Avalanche Breakdown = 194
Zener Breakdown = 200
4.5 Device : The Junction Field-Effect Transistor = 202
Summary = 212
Problems = 213
5 CURRENTS IN pn JUNCTIONS
5.1 Continuity Equation = 219
5.2 Generation and Recombination = 221
Localized States : Capture and Emission = 222
Shockley-Hall-Read Recombination = 224
Excess-Carrier Lifetime = 226
5.3 Current-Voltage Characteristics of pn Junctions = 232
Boundary Values of Minority-Carrier Densities = 233
Ideal-Diode Analysis = 235
Space-Charge-Region Currents = 242
5.4 Charge Storage and Diode Transients = 248
Minority-Carrier Storage = 248
Circuit Modeling = 254
5.5 Devices : Integrated-Circuit Diodes = 257
Summary = 262
Problems = 264
6 BIPOLAR TRANSISTORS Ⅰ : BASIC PROPERTIES
6.1 Transistor Action = 271
Prototype Transistor = 274
Transistors for Integrated Circuits = 277
6.2 Active Bias = 278
Current Gain = 281
6.3 Transistor Switching = 289
Regions of Operation = 292
6.4 Ebers-Moll Model = 294
Reciprocity = 300
6.5 Devices : Planar Bipolar Amplifying and Switching Transistors = 301
Summary = 310
Problems = 311
7 BIPOLAR TRANSISTORS Ⅱ : LIMITATIONS AND MODELS
7.1 Effects of Collector Bias Variation(Early Effect) = 316
7.2 Effects at Low and High Emitter Bias = 320
Currents at Low Emitter Bias = 320
High-Level Injection = 323
Base Resistance = 331
7.3 Base Transit Time = 335
7.4 Charge-Control Model = 338
Applications of the Charge-Control Model = 341
7.5 Small-Signal Transistor Model = 350
Equivalence Between Models = 355
7.6 Bipolar Transistor Model for Computer Simulation = 357
7.7 Devices : pnp Transistors = 362
Substrate pnp Transistors = 362
Lateral pnp Transistors = 363
Summary = 369
Problems = 371
8 PROPERTIES OF THE METAL-OXIDE-SILICON SYSTEM
8.1 The MOS Structure = 379
Thermal-Equilibrium Energy-Band Diagram = 380
The Effect of Bias Voltage = 383
8.2 Capacitance of the MOS System = 388
8.3 MOS Electronics = 391
Thermal-Equilibrium Analysis = 392
Nonequilibrium Analysis = 395
8.4 Oxide and Interface Charge = 399
Origins of Oxide Charge = 402
8.5 Surface Effects on pn Junctions = 405
8.6 MOS Capacitors and Charge-Coupled Devices(CCDs) = 409
Summary = 417
Problems = 419
9 MOS FIELD-EFFECT TRANSISTORS Ⅰ : BASIC THEORIES AND MODELS
9.1 Basic Theory = 424
Charge-Control Analysis = 425
9.2 MOSFET Parameters = 435
9.3 MOSFET Design = 443
Threshold Voltage and its Control = 443
Technological Evolution = 445
MOS Memory = 449
9.4 Devices : Complementary MOSFETs = 454
Summary = 465
Problems = 467
10 MOS FIELD-EFFECT TRANSISTORS Ⅱ : LIMITATIONS AND PERSPECTIVES
10.1 Subthreshold Current = 477
10.2 Channel Velocity Limitations = 480
Improved MOSFET Model = 484
10.3 Small MOSFET Considerations = 486
Geometric Effects on Threshold Voltage = 486
Hot Carriers = 490
MOSFET Breakdown = 493
10.4 Scaling MOSFETs to Smaller Sizes = 496
10.5 Numerical Simulation = 499
10.6 Devices : Ion-Implanted MOSFETs, Depletion-Mode MOSFETs = 505
Summary = 512
Problems = 514
ANSWERS TO SELECTED PROBLEMS = 517
INDEX = 521
