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| 001 | 000000881852 | |
| 005 | 20040524160653 | |
| 008 | 030930s2003 gw b 001 0 eng | |
| 010 | ▼a 2003066401 | |
| 020 | ▼a 3540202153 (alk. paper) | |
| 040 | ▼a DLC ▼c DLC ▼d DLC ▼d 211009 | |
| 042 | ▼a pcc | |
| 049 | 1 | ▼l 121094748 ▼f 과학 |
| 050 | 0 0 | ▼a TK7871.89.S35 ▼b M66 2003 |
| 082 | 0 0 | ▼a 621.3815/2 ▼2 22 |
| 090 | ▼a 621.38152 ▼b M737e | |
| 100 | 1 | ▼a Monch, Winfried. |
| 245 | 1 0 | ▼a Electronic properties of semiconductor interfaces / ▼c Winfried Mo@nch. |
| 260 | ▼a Berlin ; ▼a New York : ▼b Springer-Verlag, ▼c 2003. | |
| 263 | ▼a 0311 | |
| 300 | ▼a XI, 263 p. ; ▼c 24 cm. | |
| 440 | 0 | ▼a Springer series in surface sciences ; ▼v 43 |
| 504 | ▼a Includes bibliographical references and index. | |
| 650 | 0 | ▼a Diodes, Schottky-barrier. |
| 650 | 0 | ▼a Semiconductors ▼x Junctions. |
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| No. | Location | Call Number | Accession No. | Availability | Due Date | Make a Reservation | Service |
|---|---|---|---|---|---|---|---|
| No. 1 | Location Science & Engineering Library/Sci-Info(Stacks2)/ | Call Number 621.38152 M737e | Accession No. 121094748 (12회 대출) | Availability Available | Due Date | Make a Reservation | Service |
| No. | Location | Call Number | Accession No. | Availability | Due Date | Make a Reservation | Service |
|---|---|---|---|---|---|---|---|
| No. 1 | Location Sejong Academic Information Center/Science & Technology/ | Call Number 621.38152 M737e | Accession No. 151233342 | Availability Loan can not(reference room) | Due Date | Make a Reservation | Service |
Contents information
Book Introduction
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Monch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface?induced gap states (IFIGS) as a unifying theme, Monch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
New feature
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface?induced gap states (IFIGS) as the unifying concept, Monch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
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Table of Contents
Introduction.- Depletion Layer.- Determination of Barrier Heights and Offsets.- Laterally Inhomogeneous Schottky Contacts.- The IFIGS-and-Electronegativity Theory.- The MIGS-and-Electronegativity Concept: Experiment and Theory.- First-Principles Calculations of Barrier Heights and Valence-Band Offsets.- Temperature and Pressure Effects.- Barrier Heights and Extrinsic Interface Defects.- Extrinsic Interface Dipoles.- Ohmic Contacts.
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