Detail View

This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.

A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn­ thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim­ al. [3] in 1959 employed the same technique to produce small cry­ meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans­ port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli­ berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro­ as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.

Information Provided By: :

1. Introduction.- 2. General Properties of Nitrides.- 2.1 Crystal Structure of Nitrides.- 2.2 Gallium Nitride.- 2.2.1 Chemical Properties of GaN.- 2.2.2 Thermal and Mechanical Properties of GaN.- 2.3 Aluminum Nitride.- 2.3.1 Thermal and Chemical Properties of AlN.- 2.3.2 Mechanical Properties of AlN..- 2.3.3 Electrical Properties of AlN.- 2.3.4 Optical Properties of AlN.- 2.4 Indium Nitride.- 2.4.1 Crystal Structure of InN.- 2.4.2 Mechanical and Thermal Properties of InN.- 2.4.3 Electrical Properties of InN.- 2.4.4 Optical Properties of InN.- 2.5 Ternary and Quaternary Alloys.- 2.5.1 AlGaN Alloy.- 2.5.2 InGaN Alloy.- 2.5.3 InAIN Alloy.- 2.6 Substrates for Nitride Epitaxy.- 2A Appendix: Fundamental Data for Nitride Systems.- 3. Electronic Band Structure of Bulk and QW Nitrides.- 3.1 Band-Structure Calculations.- 3.2 Effect of Strain on the Band Structure of GaN.- 3.3 k·p Theory and the Quasi-Cubic Model.- 3.4 Quasi-Cubic Approximation.- 3.5 Confined States.- 3.6 Conduction Band.- 3.7 Valence Band.- 3.8 Exciton Binding Energy in Quantum Wells.- 3.9 Polarization Effects.- 3A Appendix.- 4. Growth of Nitride Semiconductors.- 4.1 Bulk Growth.- 4.2 Substrates Used.- 4.2.1 Conventional Substrates.- 4.2.2 Compliant Substrates.- 4.2.3 Van der Waals Substrates.- 4.3 Substrate Preparation.- 4.4 Substrate Temperature.- 4.5 Epitaxial Relationship to Sapphire.- 4.6 Growth by Hydride Vapor Phase Epitaxy (HVPE).- 4.7 Growth by OMVPE (MOCVD).- 4.7.1 Sources.- 4.7.2 Buffer Layers.- 4.7.3 Lateral Growth.- 4.7.4 Growth on Spinel (MgAl2O4).- 4.8 Molecular Beam Epitaxy.- 4.8.1 MBE Growth Systems.- 4.8.2 Plasma-Enhanced MBE.- 4.8.3 Reactive-Ion MBE.- 4.8.4 Reactive MBE.- 4.8.5 Modeling of the MBE-Like Growth.- 4.9 Growth on 6H-SiC (0001).- 4.10 Growth on ZnO.- 4.11 Growth on GaN.- 4.12 Growth of p-Type GaN.- 4.13 Growth of n-Type InN.- 4.14 Growth of n-Type Ternary and Quaternary Alloys.- 4.15 Growth of p-Type Ternary and Quaternary Alloys.- 4.16 Critical Thickness.- 5. Defects and Doping.- 5.1 Dislocations.- 5.2 Stacking-Fault Defects.- 5.3 Point Defects and Autodoping.- 5.3.1 Vacancies, Antisites and Interstitials.- 5.3.2 Role of Impurities and Hydrogen.- 5.3.3 Optical Signature of Defects in GaN.- 5.4 Intentional Doping.- 5.4.1 n-Type Doping with Silicon, Germanium and Selenium.- 5.4.2 p-Type Doping.- a) Doping with Mg.- 5.4.3 Optical Manifestation of Group-II Dopant-Induced Defects in GaN.- a) Doping with Beryllium.- b) Doping with Mercury.- c) Doping with Carbon.- d) Doping with Zinc.- e) Doping with Calcium.- f) Doping with Rare Earths.- 5.4.4 Ion Implantation and Diffusion.- 5.5 Defect Analysis by Deep-Level Transient Spectroscopy.- 5.6 Summary.- 6. Metal Contacts to GaN.- 6.1 A Primer for Semiconductor-Metal Contacts.- 6.2 Current Flow in Metal-Semiconductor Junctions.- 6.2.1 The Regime Dominated by Thermionic Emission.- 6.2.2 Thermionic Field-Emission Regime.- 6.2.3 Direct Tunneling Regime.- 6.2.4 Leakage Current.- 6.2.5 The Case of a Forward-Biased p-n Junction.- 6.3 Resistance of an Ohmic Contact.- 6.3.1 Specific Contact Resistivity.- 6.3.2 Semiconductor Resistance.- 6.4 Determination of the Contact Resistivity.- 6.5 Ohmic Contacts to GaN.- 6.5.1 Non-Alloyed Ohmic Contacts.- 6.5.2 Alloyed Ohmic Contacts.- 6.5.3 Multi-Layer Ohmic Contacts.- 6.6 Structural Analysis.- 6.7 Observations.- 7. Determination of Impurity and Carrier Concentrations.- 7.1 Impurity Binding Energy.- 7.2 Conductivity Type: Hot Probe and Hall Measurements.- 7.3 Density of States and Carrier Concentration.- 7.4 Electron and Hole Concentrations.- 7.5 Temperature Dependence of the Hole Concentration.- 7.6 Temperature Dependence of the Electron Concentration.- 7.7 Multiple Occupancy of the Valence Bands.- 7A Appendix: Fermi Integral.- 8. Carrier Transport.- 8.1 Ionized Impurity Scattering.- 8.2 Polar-Optical Phonon Scattering.- 8.3 Piezoelectric Scattering.- 8.4 Acoustic Phonon Scattering.- 8.5 Alloy Scattering.- 8.6 The Hall Factor.- 8.7 Other Methods Used for Calculati

Information Provided By: :